FDN359AN Shikues

FDN359AN electronic component of Shikues
FDN359AN Shikues
FDN359AN MOSFETs
FDN359AN  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDN359AN MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN359AN MOSFETs are a product manufactured by Shikues. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDN359AN
Manufacturer: Shikues
Category: MOSFETs
Description: MOSFET N Channel 30V 3A 1.5V @ 250uA 45mO @ 3A,10V SOT-23 RoHS
Datasheet: FDN359AN Datasheet (PDF)
Price (USD)
10: USD 0.082 ea
Line Total: USD 0.82 
Availability : 38
  
Ship by Mon. 27 Oct to Fri. 31 Oct
QtyUnit Price
10$ 0.082
100$ 0.0658
300$ 0.0576
3000$ 0.0319
6000$ 0.0286
9000$ 0.0268

Availability 38
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.082
100$ 0.0658
300$ 0.0576
3000$ 0.0319
6000$ 0.0286
9000$ 0.0268

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the FDN359AN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN359AN and other electronic components in the MOSFETs category and beyond.

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The FDN359AN MOSFET N Channel 30V 3A 1.5V @ 250uA 45mO @ 3A,10V SOT-23 RoHS from Shikues is a small-package field-effect transistor (FET) working in the N-channel enhancement mode. This device features 30-volt drain-source breakdown voltage (BVDSS) and 3-amp continuous drain current (ID) over an operating temperature range of -55°C to +125°C. It has a gate-source voltage (VGS) threshold voltage of 1.5V @ 250uA and a low static drain-to-source on-resistance (RDS(ON)) of 45mO@3A, 10V. It is packaged in a surface-mount SOT-23 package, making it ideal for space-constrained applications. This device is treated with a lead-free RoHS finish for added safety and environmental friendliness.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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