Product Information

FDN359AN

FDN359AN electronic component of Shikues

Datasheet
MOSFET N Channel 30V 3A 1.5V @ 250uA 45mO @ 3A,10V SOT-23 RoHS
Manufacturer: Shikues
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0555 ea
Line Total: USD 0.56

1823 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
776 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 10
Multiples : 10

Stock Image

FDN359AN
Shikues

10 : USD 0.0698
100 : USD 0.0573
300 : USD 0.051
3000 : USD 0.0423
6000 : USD 0.0386
9000 : USD 0.0367

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The FDN359AN MOSFET N Channel 30V 3A 1.5V @ 250uA 45mO @ 3A,10V SOT-23 RoHS from Shikues is a small-package field-effect transistor (FET) working in the N-channel enhancement mode. This device features 30-volt drain-source breakdown voltage (BVDSS) and 3-amp continuous drain current (ID) over an operating temperature range of -55°C to +125°C. It has a gate-source voltage (VGS) threshold voltage of 1.5V @ 250uA and a low static drain-to-source on-resistance (RDS(ON)) of 45mO@3A, 10V. It is packaged in a surface-mount SOT-23 package, making it ideal for space-constrained applications. This device is treated with a lead-free RoHS finish for added safety and environmental friendliness.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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