X-On Electronics has gained recognition as a prominent supplier of FDN359AN MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN359AN MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDN359AN ON Semiconductor

FDN359AN electronic component of ON Semiconductor
FDN359AN ON Semiconductor
FDN359AN MOSFETs
FDN359AN  Semiconductors

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See Product Specifications
Part No. FDN359AN
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Datasheet: FDN359AN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1655 ea
Line Total: USD 496.5 
Availability - 5820
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.1655
6000 : USD 0.1622
9000 : USD 0.161
12000 : USD 0.1585
27000 : USD 0.1574
51000 : USD 0.1566
102000 : USD 0.1557

5820
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2106
6000 : USD 0.2012
9000 : USD 0.1988
12000 : USD 0.1988
15000 : USD 0.195

1920
Ship by Thu. 03 Jul to Tue. 08 Jul
MOQ : 5
Multiples : 5
5 : USD 0.6362
50 : USD 0.3816
150 : USD 0.3064
500 : USD 0.233
3000 : USD 0.2125
6000 : USD 0.2001

1033
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 0.826
10 : USD 0.5978
50 : USD 0.4704
70 : USD 0.2702
193 : USD 0.2548
1500 : USD 0.245

32010
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.3334
18000 : USD 0.3046
27000 : USD 0.2834

14550
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.1785
6000 : USD 0.1756
9000 : USD 0.1701

5820
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2151
6000 : USD 0.2109
9000 : USD 0.2092
12000 : USD 0.206
27000 : USD 0.2046

2910
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.3334

154835
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 2015
Multiples : 1
2015 : USD 0.2326
10000 : USD 0.2075
100000 : USD 0.1738

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Current Temperature
Device Marking
External Depth
External Length / Height
External Width
Full Power Rating Temperature
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Smd Marking
Tape Width
Voltage Vds
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th Max
Kind Of Package
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We are delighted to provide the FDN359AN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN359AN and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 359A N DN TM A, 3 0 V. R = 0.046 V = 10 V ) This is R = 0.060 V = 4.5 V. ) using ON Semiconductor PowerTrench process that has been espec ially tailored Very fast. to minimize on-state resistance and yet maintain . typical ). These devices are well suited for low voltage and powered applications where low in-line power package. Identical pin out to SOT-23 with loss and fast switching are required. T M T M D D S G S G o T A V V V V I A D P ) W D T J R R Publication Order Number: 1999 Semiconductor Components Industries, LLC. FDN359AN /D October-2017, Rev. 2 JC C/W 75 (Note 1) Thermal Resistance, Junction-to-Case JA C/W 250 (Note 1a) Thermal Resistance, Junction-to-Ambient THERMAL CHARACTERISTICS STG C -55 to 150 Operating and Storage Temperature Range ,T 0.46 (Note 1 b) 0.5 (Note 1a Maximum Power Dissipation 15 - Pulsed 2.7 (Note 1a) Maximum Drain Current - Continuous GSS 20 Gate-Source Voltage DSS 30 Drain-Source Voltage Units Ratings Parameter Symbol C unless other wise noted = 25 Absolute Maximum Ratings SuperSOT -3 TM SOT-223 SO-8 SOT-23 SOIC-16 -6 SuperSOT -8 SuperSOT power handling capability. 30% higher battery tandard SOT-23 High power version of industry s Low gate charge ( 5nC superior switching performance switching advanced s GS DS(ON produced MOSFET el Lev Logic N-Channel GS DS(ON 2.7 General Description Features MOSFET N-Channel Logic Level PowerTrench 359A F

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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