SKQ90N10AD Shikues

SKQ90N10AD electronic component of Shikues
SKQ90N10AD Shikues
SKQ90N10AD MOSFETs
SKQ90N10AD  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SKQ90N10AD MOSFETs across the USA, India, Europe, Australia, and various other global locations. SKQ90N10AD MOSFETs are a product manufactured by Shikues. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SKQ90N10AD
Manufacturer: Shikues
Category: MOSFETs
Description: PDFN-8L(5x6) MOSFETs ROHS
Datasheet: SKQ90N10AD Datasheet (PDF)
Price (USD)
1: USD 1.1432 ea
Line Total: USD 1.14 
Availability : 4634
  
Ship by Tue. 11 Nov to Mon. 17 Nov
QtyUnit Price
1$ 1.1432
10$ 0.9264
30$ 0.6134
100$ 0.4789
500$ 0.4
1000$ 0.3774

Availability 4634
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1432
10$ 0.9264
30$ 0.6134
100$ 0.4789
500$ 0.4
1000$ 0.3774

   
Manufacturer
Product Category
Package
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SKQ90N10AD from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SKQ90N10AD and other electronic components in the MOSFETs category and beyond.

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The SKQ90N10AD PDFN-8L(5x6) MOSFETs ROHS is a field-effect transistor manufactured by Shikues. It is a single N-Channel, insulated gate, MOSFET, manufactured using a proprietary high-performance trench process. This device has an effective channel in a very small size compared to other similar devices resulting in a low on-resistance of 10mohm typical. It provides high speed switching with fast switching times. It has an enhanced voltage blocking capability, making it ideal for higher voltage applications. Additionally, it meets the requirements for RoHS and halogen-free lead-free compliance, making it a reliable and environmentally friendly device for use in high-performance designs.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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