Product Information

SI2102-TP

SI2102-TP electronic component of Micro Commercial Components (MCC)

Datasheet
N-Channel 20 V 2.1A (Tj) 200mW Surface Mount SOT-323

Manufacturer: Micro Commercial Components (MCC)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4455 ea
Line Total: USD 0.4455

1 - Global Stock
Ships to you between
Mon. 16 Oct to Wed. 18 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Mon. 16 Oct to Wed. 18 Oct

MOQ : 1
Multiples : 1

Stock Image

SI2102-TP
Micro Commercial Components (MCC)

1 : USD 0.4455
10 : USD 0.3186
100 : USD 0.1391
1000 : USD 0.1063
3000 : USD 0.095
9000 : USD 0.0828
24000 : USD 0.078
45000 : USD 0.0756
99000 : USD 0.072

     
Manufacturer
Micro Commercial Components (MCC)
Product Category
MOSFET
RoHS - XON
Y Icon ROHS
Id - Continuous Drain Current
2.1 A
Vds - Drain-Source Breakdown Voltage
20 V
Rds On - Drain-Source Resistance
60 mOhms
Transistor Polarity
N - Channel
Vgs th - Gate-Source Threshold Voltage
0.6 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
0.2 W
Mounting Style
Smd/Smt
Package / Case
SOT - 323 - 3
Packaging
Cut Tape
Technology
Si
Number of Channels
1 Channel
Vgs - Gate-Source Voltage
4.5 V
Qg - Gate Charge
4 nC
Channel Mode
Enhancement
Configuration
Single
Series
N - Ch Polarity
Transistor Type
1 N - Channel
Brand
Micro Commercial Components (Mcc)
Forward Transconductance - Min
8 S
Fall Time
10 ns
Product Type
Mosfet
Rise Time
55 ns
Factory Pack Quantity :
3000
Subcategory
Mosfets
Typical Turn-Off Delay Time
16 ns
Typical Turn-On Delay Time
7 ns
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SI2102 Features Leading Trench Technology for Low R DS(on) High Speed Switching Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C SOT-323 Thermal Resistance: 625C/W Junction to Ambient Parameter Symbol Rating Unit A Drain-Source Voltage V 20 V DS D Gate-Source Volltage V 8 V GS 3 Continuous Drain Current I 2.1 A C D B 1 2 Pulsed Drain Current I 4 A DM F E Total Power Dissipation P 0.2 W D H J G Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, K <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. L DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 B D C 0.083 0.096 2.10 2.45 D 0.026 0.65 TYP. 1. GATE E 0.047 0.055 1.20 1.40 2. SOURCE F 0.012 0.016 0.30 0.40 3. DRAIN G G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 Marking: TS2 S J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMSI2102 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =10A Drain-Source Breakdown Voltage 20 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =8V 100 nA GSS DS GS I V =20V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS Gate-Threshold Voltage V V =V , I =50A 0.6 0.9 1.2 V GS(th) DS GS D V =4.5V, I =3.6A 50 60 GS D (Note 2) R m Drain-Source On-Resistance DS(on) V =2.5V, I =3.1A 60 110 GS D V V =0V, I =0.94A V Diode Forward Voltage 1.2 SD GS S (Note 2) g V =5V, I =3.6A 8 S Forward Tranconductance FS DS D (Note 3) Dynamic Characteristics Input Capacitance C 300 iss C V =10V,V =0V,f=1MHz pF Output Capacitance 120 oss DS GS Reverse Transfer Capacitance C 80 rss Q Total Gate Charge 4 10 g V =10V,V =4.5V,I =3.6A Q nC Gate-Source Charge DS GS D 0.65 gs Q Gate-Drain Charge 1.5 gd t 15 Turn-On Delay Time 7 d(on) V =10V, DD t Turn-On Rise Time 55 80 r R =5.5, I 3.6A, ns L D t 60 Turn-Off Delay Time 16 d(off) V =4.5V,R =6 GEN g Turn-Off Fall Time t 10 20 f Note 2. Pulse Test : Pulse Width 300s, Duty Cycle 2%. 3. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MCC
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Micro Commercial Co
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