X-On Electronics has gained recognition as a prominent supplier of SI2102-TP MOSFET across the USA, India, Europe, Australia, and various other global locations. SI2102-TP MOSFET are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI2102-TP Micro Commercial Components (MCC)

SI2102-TP electronic component of Micro Commercial Components (MCC)
Images are for reference only
See Product Specifications
Part No.SI2102-TP
Manufacturer: Micro Commercial Components (MCC)
Category: MOSFET
Description: N-Channel 20 V 2.1A (Tj) 200mW Surface Mount SOT-323
Datasheet: SI2102-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1123
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5125
10 : USD 0.3696
100 : USD 0.2299
500 : USD 0.1573
1000 : USD 0.121
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5125
10 : USD 0.3696
100 : USD 0.2299
500 : USD 0.1573
1000 : USD 0.121
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.3916
10 : USD 0.28
100 : USD 0.1269
1000 : USD 0.1009
3000 : USD 0.0902
9000 : USD 0.0819
24000 : USD 0.0772
45000 : USD 0.0747
99000 : USD 0.0712
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI2102-TP from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2102-TP and other electronic components in the MOSFET category and beyond.

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SI2102 Features Leading Trench Technology for Low R DS(on) High Speed Switching Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C SOT-323 Thermal Resistance: 625C/W Junction to Ambient Parameter Symbol Rating Unit A Drain-Source Voltage V 20 V DS D Gate-Source Volltage V 8 V GS 3 Continuous Drain Current I 2.1 A C D B 1 2 Pulsed Drain Current I 4 A DM F E Total Power Dissipation P 0.2 W D H J G Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, K <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. L DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX Internal Structure A 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 B D C 0.083 0.096 2.10 2.45 D 0.026 0.65 TYP. 1. GATE E 0.047 0.055 1.20 1.40 2. SOURCE F 0.012 0.016 0.30 0.40 3. DRAIN G G 0.000 0.004 0.00 0.10 H 0.035 0.044 0.90 1.10 Marking: TS2 S J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-12012020 1/4 MCCSEMI.COMSI2102 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =10A Drain-Source Breakdown Voltage 20 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =8V 100 nA GSS DS GS I V =20V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS Gate-Threshold Voltage V V =V , I =50A 0.6 0.9 1.2 V GS(th) DS GS D V =4.5V, I =3.6A 50 60 GS D (Note 2) R m Drain-Source On-Resistance DS(on) V =2.5V, I =3.1A 60 110 GS D V V =0V, I =0.94A V Diode Forward Voltage 1.2 SD GS S (Note 2) g V =5V, I =3.6A 8 S Forward Tranconductance FS DS D (Note 3) Dynamic Characteristics Input Capacitance C 300 iss C V =10V,V =0V,f=1MHz pF Output Capacitance 120 oss DS GS Reverse Transfer Capacitance C 80 rss Q Total Gate Charge 4 10 g V =10V,V =4.5V,I =3.6A Q nC Gate-Source Charge DS GS D 0.65 gs Q Gate-Drain Charge 1.5 gd t 15 Turn-On Delay Time 7 d(on) V =10V, DD t Turn-On Rise Time 55 80 r R =5.5, I 3.6A, ns L D t 60 Turn-Off Delay Time 16 d(off) V =4.5V,R =6 GEN g Turn-Off Fall Time t 10 20 f Note 2. Pulse Test : Pulse Width 300s, Duty Cycle 2%. 3. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MCC(Micro Commercial Components)
MICRO COMMERCIAL
Micro Commercial Co
Micro Commercial Components

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