Product Information

SVF4N65CAM

SVF4N65CAM electronic component of Silan

Datasheet
MOSFET N Channel 650V 4A(Tc) 4V @ 250uA 2.7O @ 2A,10V TO-251D-3L RoHS

Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4029 ea
Line Total: USD 0.4

150 - Global Stock
Ships to you between
Wed. 08 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
150 - Global Stock


Ships to you between
Wed. 08 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 0.3701
10 : USD 0.2978
30 : USD 0.2667
75 : USD 0.2281
525 : USD 0.2109
975 : USD 0.2006

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SVF4N65CAM is an N-channel MOSFET with a 650-volt (V) breakdown voltage and a 4 ampere (A) continuous drain current rating (at 25°C). It has an incredibly low gate-source threshold voltage of only 4 volts and an incredibly low gate leakage current of 250 microampere (uA). Its low on-resistance of 2.7 ohms also ensures it has an improved power dissipation capability of up to 2A at 10V. This product is manufactured by Silan and is RoHS compliant. It is available in a TO-251D-3L package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Hangzhou Silan Microelectronics

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