SVF4N65MJ Silan

SVF4N65MJ electronic component of Silan
SVF4N65MJ Silan
SVF4N65MJ MOSFETs
SVF4N65MJ  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SVF4N65MJ MOSFETs across the USA, India, Europe, Australia, and various other global locations. SVF4N65MJ MOSFETs are a product manufactured by Silan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SVF4N65MJ
Manufacturer: Silan
Category: MOSFETs
Description: MOSFET N Trench 650V 4A TO-251 (I-PAK) RoHS
Datasheet:
Price (USD)
100: USD 0.1758 ea
Line Total: USD 17.58 
Availability : 0
  
QtyUnit Price
100$ 0.1758
500$ 0.1693
2000$ 0.1672
10050$ 0.1604

Availability 0
Ship by Thu. 02 Oct to Wed. 08 Oct
MOQ : 100
Multiples : 1
QtyUnit Price
100$ 0.1758
500$ 0.1693
2000$ 0.1672
10050$ 0.1604

   
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We are delighted to provide the SVF4N65MJ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SVF4N65MJ and other electronic components in the MOSFETs category and beyond.

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The SVF4N65MJ with MOSFET N Trench 650V 4A TO-251 (I-PAK) RoHS is an electronic component manufactured by Silan. It is part of their SuperFETTM series of components, which are designed to be low power yet highly efficient. It is a 650V, 4A MOSFET N Trench that is designed to fit a TO-251 I-PAK package and is compliant with RoHS regulations. This device is ideal for applications when low on-resistance with low gate charge is required. The N Trench technology provides high avalanche energy rating and fast body diode recovery time. It consists of a SuperFETTM p-substrate and high performance body diode to provide superior performance and reliability.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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