Product Information

SE100250GTS

SE100250GTS electronic component of SINO-IC

Datasheet
MOSFET N Trench 100V 250A 5V @ 250uA 3 mΩ @ 125A,10V TO-247 (AC) RoHS
Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.8664 ea
Line Total: USD 2.87

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SE100250GTS
SINO-IC

1 : USD 3.125
10 : USD 2.719
30 : USD 2.4485
90 : USD 2.1886
510 : USD 2.0726
1200 : USD 2.0211

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SINO-IC SE100250GTS is a MOSFET N Trench power transistor designed to provide higher power in a smaller size by using a new trench structure technology. The transistor has a voltage rating of 100V and a drain current of 250A. It also features a very low gate drive voltage of 5V @ 250uA along with a very low on-resistance of 3 mO @ 125A. The package is a TO-247 (AC) RoHS package, and is designed for easy mounting on a printed circuit board. It is also RoHS compliant, making it compliant with current environmental regulations.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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