Product Information

SED30P30M

Name: SED30P30M
Brand: SINO-IC
SKU: SED30P30M_SINOIC
Availability: OutOfStock
Rating: 5 (11 reviews)

SED30P30M electronic component of SINO-IC

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Datasheet

MOSFET P Trench 30V 30A 1.5V @ 250uA 11 mÎ© @ 10A,10V DFN3*3 RoHS

Manufacturer: SINO-IC

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.3337 ea
Line Total: USD 0.33

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 29 May to Mon. 03 Jun MOQ : 1 Multiples : 1 SED30P30M SINO-IC	1 : USD 0.3337 10 : USD 0.2822 30 : USD 0.2448 100 : USD 0.2138 500 : USD 0.2086 1000 : USD 0.206

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Additional Infomation About Product

The SED30P30M is a MOSFET power transistor manufactured by SINO-IC and is designed for applications with up to 30V and 30A. It has a threshold voltage of 1.5V and a gate threshold current at 250uA. Its drain-source resistance is 11m? at 10A and 10V. The package type is DFN3*3 and is compliant with RoHS standard.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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SINO-IC

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Manufacturer SINO-IC SINO-IC
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package DFN33 DFN33
Brand Category Sino-Ic Sino-Ic
Fet Type p trench p trench
Drain To Source Voltagevdss 30 V 30 V
Continuous Drain Current Id @ 25°C 30 A 30 A
Vgsth Max @ Id 1.5 V @ 250ua 1.5 V @ 250ua
Rds On Max @ Id Vgs 11 m @ 10a,10v 11 m @ 10a,10v
Power Dissipation-Max Ta 2.1 W 2.1 W