L2N7002SDW1T1G Leshan

L2N7002SDW1T1G electronic component of Leshan
L2N7002SDW1T1G Leshan
L2N7002SDW1T1G MOSFETs
L2N7002SDW1T1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of L2N7002SDW1T1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. L2N7002SDW1T1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. L2N7002SDW1T1G
Manufacturer: Leshan
Category: MOSFETs
Description: MOSFET 2 N Channel (Dual) 60V 320mA 2V @ 250uA 2.8 Ω @ 500mA,10V SC-88 RoHS
Datasheet: L2N7002SDW1T1G Datasheet (PDF)
Price (USD)
20: USD 0.0434 ea
Line Total: USD 0.87 
Availability : 10573
  
Ship by Fri. 05 Sep to Wed. 10 Sep
QtyUnit Price
20$ 0.0434
200$ 0.0336
600$ 0.0282
3000$ 0.0161
9000$ 0.0142
21000$ 0.0132

Availability 10573
Ship by Fri. 05 Sep to Wed. 10 Sep
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0434
200$ 0.0336
600$ 0.0282
3000$ 0.0161
9000$ 0.0142
21000$ 0.0132

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the L2N7002SDW1T1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the L2N7002SDW1T1G and other electronic components in the MOSFETs category and beyond.

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Radio CompanyThe L2N7002SDW1T1G is a dual N-Channel MOSFET manufactured by Leshan Radio Company, compliant with the RoHS standard. It has a maximum blocking voltage of 60 volts, and is rated for a maximum drain current of 320 milliamps (mA). The gate-source threshold voltage (Vgs) is 2 volts with a gate-source cutoff current of 250 microamps (uA) when the Vgs voltage is 4.5 volts. The on-state drain-source resistance (Rdson) is 2.8 ohms when the source current is 500mA. The maximum continuous drain current (Id) is 320mA, and the maximum continuous drain-source voltage (Vds) is 10 volts.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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