Product Information

SM2326NSANC-TRG

SM2326NSANC-TRG electronic component of Sinopower

Datasheet
MOSFET N Trench 20V 3A 1V @ 250uA 70 mΩ @ 2.5A,4.5V SOT-23N RoHS
Manufacturer: Sinopower
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1237 ea
Line Total: USD 0.62

9 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
9 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 5
Multiples : 5

Stock Image

SM2326NSANC-TRG
Sinopower

5 : USD 0.1237
50 : USD 0.1011
150 : USD 0.0898
500 : USD 0.0814
3000 : USD 0.0747
6000 : USD 0.0711

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SM2326NSANC-TRG is a surface-mount transistor with MOSFET N Trench 20V 3A 1V @ 250uA, 70mO @ 2.5A, 4.5V. It is manufactured by Sinopower and is a SOT-23N/ RoHS device. This device is designed to be used in a variety of applications requiring high-efficiency switching, voltage regulation, and signal processing. Integrated with an N-channel MOSFET, the SM2326NSANC-TRG features excellent fine control of current handling in various circuit criteria. Providing superior switching performance with low on-resistance and ESD protection, the SM2326NSANC-TRG reaches impressive levels of power density even in small, densely packaged boards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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