Product Information

SE47NS65TS

SE47NS65TS electronic component of SINO-IC

Datasheet
MOSFET N Trench 650V 47A 4.5V @ 250uA 70 mΩ @ 23A,10V TO-247S RoHS
Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.4828 ea
Line Total: USD 4.48

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

SE47NS65TS
SINO-IC

1 : USD 4.4828
10 : USD 3.9129
30 : USD 3.5553
90 : USD 3.1901
510 : USD 2.4881
1200 : USD 2.4189

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SE47NS65TS is an N-channel Trench MOSFET from SINO-IC, manufactured in a TO-247S RoHS package. It has a maximum drain source voltage of 650V, drain current of 47A (Id @ 25°C), Gate Threshold Voltage of 4.5V (Vgs @ 250uA), Drain-Source On-Resistance of 70mO (Rds @ 23A, 10V), and is Sn/Pb-Free. This MOSFET is ideally suited for applications such as general power stages, switching regulators, automatic control circuits, solar cell inverters, motor drives, speed control, and high-frequency switching.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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