Product Information

TK62N60W5,S1VF(S

TK62N60W5,S1VF(S electronic component of Toshiba

Datasheet
MOSFET N Trench 600V 61.8A 4.5V @ 3.1mA 45 mΩ @ 30.9A,10V TO-247 RoHS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 11.7801 ea
Line Total: USD 11.78

34 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
31 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 8.2334
10 : USD 6.2037
30 : USD 4.7203
90 : USD 4.3742

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif

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Additional Infomation About Product

The TK62N60W5,S1VF(S with MOSFET N Trench 600V 61.8A 4.5V @ 3.1mA 45 mO @ 30.9A,10V TO-247 RoHS is a part manufactured by Toshiba. It is a metal-oxide-semiconductor field-effect transistor (MOSFET) with a trench gate structure. It has a wide bandgap material which allows it to operate at higher switching speeds and voltages. It is rated for a blocking voltage of 600V with 61.8A current at 4.5V, and 45mO, with 30.9A current at 10V. It is packaged in the TO-247 RoHS compliant package. This MOSFET is also capable of withstanding high temperatures.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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