2N6491 SPTECH

2N6491 electronic component of SPTECH
2N6491 SPTECH
2N6491 Bipolar Transistors - BJT
2N6491  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N6491 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N6491 Bipolar Transistors - BJT are a product manufactured by SPTECH. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N6491
Manufacturer: SPTECH
Category: Bipolar Transistors - BJT
Description: TO-220C Bipolar Transistors - BJT ROHS
Datasheet:
Price (USD)
1: USD 1.0132 ea
Line Total: USD 1.01 
Availability : 34
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
1$ 1.0132
10$ 0.823
50$ 0.5237
100$ 0.407
500$ 0.3685
1000$ 0.3502

Availability 34
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0132
10$ 0.823
50$ 0.5237
100$ 0.407
500$ 0.3685
1000$ 0.3502

   
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the 2N6491 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6491 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The 2N6491 Bipolar Transistors - BJT ROHS manufactured by SPTECH is a transistor housed in the TO-220C package. It is a low-noise, linear amplifier common-emitter transistor that is designed for switching applications. Its primary characteristics include a collector to emitter breakdown voltage of 80 volts, a collector to base breakdown voltage of 80 volts, and a maximum collector emitter voltage of 70 volts. It has a DC current gain of 50-200 and a storage temperature range from -55 to 150 degrees Celsius. It is also RoHS compliant and operates over a wide temperature range.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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