Product Information

419060FB

419060FB electronic component of STMicroelectronics

Datasheet
BTA12-600BW 600V 12A TRIAC TO220

Manufacturer: STMicroelectronics
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Price (USD)

1: USD 1.3338 ea
Line Total: USD 1.33

0 - Global Stock
Ships to you by
Tue. 30 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Warehouse 1


Ships to you by Tue. 30 Apr

MOQ : 1
Multiples : 1

Stock Image

419060FB
STMicroelectronics

1 : USD 1.3338
25 : USD 0.6669
50 : USD 0.6002
75 : USD 0.5002
100 : USD 0.4502

     
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
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BTA12, BTB12, T12xx 12 A Snubberless, logic level and standard Triacs Datasheet - production data Applications ON/OFF or phase angle function in applications such as static relays, light dimmers and appliance motors speed controllers. The Snubberless versions (BTA/BTB...W and T12 series) are especially recommended for use on inductive loads, because of their high commutation performance. The BTA series provide an insulated tab (rated at 2500 VRMS). Description Available either in through-hole or surface mount packages, the BTA12, BTB12 and T12xx Triac series are suitable for general purpose mains power AC switching. Table 1: Device summary Symbol T12xx BTA12 BTB12 I 12 12 12 T(RMS) VDRM/VRRM 600/800 I (Snubberless) 5/10/35/50 GT IGT(standard) - 25/50 Features Medium current Triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated BTA High commutation (4Q) or very high commutation (3Q) capability BTA series UL1557 certified (file ref: 81734) Packages are RoHS (2002/95/EC) compliant February 2017 DocID7473 Rev 10 1/13 www.st.com This is information on a product in full production. BTA12, BTB12, T12xx 1 Characteristics Table 2: Absolute maximum ratings Symbol Parameter Value Unit IPAK / DPAK / T = 105 C c TO-220AB IT(RMS) RMS on-state current (full sine wave) 12 A TO-220AB Ins. T = 90 C c F = 50 Hz tp = 20 ms 120 Non repetitive surge peak on-state current I A TSM (full cycle, Tj initial = 25 C) F = 60 Hz t = 16.7 ms 126 p 2 2 2 I t I t value for fusing tp = 10 ms 78 A s Critical rate of rise of on-state current dl/dt F = 120 Hz Tj = 125 C 50 A/s I = 2 x I , t 100 ns G GT r VDRM/VRRM + V /V Non repetitive surge peak off-state voltage t = 10 ms T = 25 C V DSM RSM p j 100 I Peak gate current t = 20 s T = 125 C 4 A GM p j PG(AV) Average gate power dissipation Tj = 125 C 1 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature range -40 to +125 C Table 3: Electrical characteristics (Tj = 25 C, unless otherwise specified) - Snubberless and logic level Triac (3 quadrants) T1205 T1210 T1235 T1250 Symbol Parameter Quadrant BTB12-TW BTB12-SW BTB12-CW BTB12-BW Unit BTA12-TW BTA12-SW BTA12-CW BTA12-BW (1) IGT Max. 5 10 35 50 mA V = 12 V, D R = 30 L VGT Max. 1.3 V I - II - III V = V , D DRM V R = 3.3 k, Min. 0.2 V GD L T = 125 C j I - III 10 25 50 70 I I = 1.2 x I Max. mA L G GT II 15 30 60 80 (2) IH I = 100 mA Max. 10 15 35 50 mA TM VD = 67 % VDRM (2) dV/dt Min. 20 40 500 1000 V/s gate open, 125 C (dV/dt)c = 0.1 V/s, 125 C 3.5 6.5 (2) (dI/dt)c (dV/dt)c = 10 V/s, 125 C Min. 1 2.9 A/ms Without snubber, 125 C 6.5 12 Notes: (1) Minimum IGT is guaranteed at 5% of IGT max. (2) For both polarities of A2 referenced to A1 2/13 DocID7473 Rev 10

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
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ST7
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STMICRELECTRONICS
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