Product Information

442684BB

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Datasheet
BTA08-600BWRG TRIAC 8A 600V INS T
Manufacturer: STMicroelectronics



Price (USD)

1: USD 1.3419 ea
Line Total: USD 1.3419

18 - Global Stock
Ships to you by
Wed. 29 Mar
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
18 - Global Stock


Ships to you by Wed. 29 Mar

MOQ : 1
Multiples : 1

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442684BB
STMicroelectronics

1 : USD 1.3419
25 : USD 0.6709
50 : USD 0.6038
75 : USD 0.5032
100 : USD 0.4529

     
Manufacturer
STMicroelectronics
Product Category
Triacs
Non Repetitive On-State Current
84 A
Rated Repetitive Off-State Voltage VDRM
600 V
On-State Voltage
1.55 V
Holding Current Ih Max
50 mA
Gate Trigger Voltage - Vgt
1.3 V
Gate Trigger Current - Igt
50 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
TO - 220 - 3
Series
Bta08
Mounting Style
Through Hole
Packaging
Tube
Off-State Leakage Current Vdrm Idrm
5 uA
Brand
Stmicroelectronics
Factory Pack Quantity :
1000
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BTA08, BTB08, T810, T835, T850 Snubberless, logic level and standard 8 A Triacs Datasheet - production data Features On-state rms current, I 8 A T(RMS) Repetitive peak off-state voltage, V / DRM VRRM 600 V to 800 V Triggering gate current, I 5 to 50 mA GT (Q1) Description Available either in through-hole and surface- mount packages, these devices are suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits or for phase control operation in light dimmers and motor speed controllers, etc. The Snubberless versions (BTA, BTB08 xxxxW and T8 series) are specially recommended for use on inductive loads, thanks to their high commutation performance. Logic level versions are designed to interface directly with low power drivers such as Microcontrollers. By using an internal ceramic pad, the BTA series provide voltage insulated tab (rated at 2500 V ) RMS in compliance with UL standards (file ref.: E81734). April 2017 DocID7472 Rev 12 1/18 www.st.com This is information on a product in full production. Characteristics BTA08, BTB08, T810, T835, T850 1 Characteristics Table 1: Absolute maximum ratings (Tj = 25 C unless otherwise stated) Symbol Parameter Value Unit IPAK, DPAK, TO-220AB, Tc = 110 C RMS on-state current I 8 A T(RMS) DPAK (full sine wave) TO-220ABIns. T = 100 C c Non repetitive surge peak f = 50 Hz t = 20 ms 80 ITSM on-state current A f = 60 Hz t = 16.7 ms 84 p (full cycle, Tj initial = 25 C) 2 2 2 I t I t value for fusing t = 10 ms 36 A s p Critical rate of rise of on-state dl/dt f = 120 Hz T = 125 C 50 A/s j current IG = 2 x IGT, tr 100 ns I Peak gate current t = 20 s T = 125 C 4 A GM p j PG(AV) Average gate power dissipation Tj = 125 C 1 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature range -40 to +125 C Table 2: Electrical characteristics (Tj = 25 C, unless otherwise specified) Snubberless and logic level (3 quadrants) T8 BTA08/BTB08 Symbol Parameter Quadrant Unit 10 35 50 TW SW CW BW (1) I I - II - III Max. 10 35 50 5 10 35 50 mA GT VD = 12 V, RL = 30 VGT I - II - III Max. 1.2 V V = V , D DRM V R = 3.3 k, I - II - III Min. 0.2 V GD L T = 125 C j (2) IH IT = 100 mA Max. 15 35 50 10 15 35 50 mA I - III Max. 25 50 70 10 25 50 70 I I = 1.2 x I mA L G GT II Max. 30 60 80 15 30 60 80 V = 67% V , D DRM dV/dt Max. 40 400 1000 20 40 400 1000 V/s gate open, T = 125 C j (dV/dt)c = 0.1 V/s, Min. 5.4 3.5 5.4 Tj = 125 C (dV/dt)c = 10 V/s, (dl/dt)c Min. 2.8 1.5 2.98 A/ms T = 125 C j Without snubber, Min. 4.5 7 4.5 7 Tj = 125 C Notes: (1) Minimum I is guaranteed at 5 % of I max. GT GT (2) For both polarities of A2 referenced to A1 2/18 DocID7472 Rev 12

Tariff Desc

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