Product Information

BUZ80

BUZ80 electronic component of STMicroelectronics

Datasheet
BUZ80 T0220 POWERMOS T/HOLE
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.004 ea
Line Total: USD 4

0 - Global Stock
Ships to you by
Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you by Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

BUZ80
STMicroelectronics

1 : USD 4.004
10 : USD 2.002
25 : USD 1.8018
100 : USD 1.5015
500 : USD 1.3513

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3 - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH MOSFET General features V DSS Type R I DS(on) D ( Tjmax) 3 2 STP4NK80Z 800 V < 3.5 3 A 1 STP4NK80ZFP 800 V < 3.5 3 A TO-220 TO-220FP STD4NK80Z 800 V < 3.5 3 A STD4NK80Z-1 800 V < 3.5 3 A Extremely high dv/dt capability 3 3 2 1 1 100% avalanche tested DPAK IPAK Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility Internal schematic diagram Description The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Applications Switching application Order codes Part number Marking Package Packaging STP4NK80Z P4NK80Z TO-220 Tube STP4NK80ZFP P4NK80ZFP TO-220FP Tube STD4NK80ZT4 D4NK80Z DPAK Tape & reel STD4NK80Z-1 D4NK80Z IPAK Tube August 2006 Rev 8 1/18 www.st.com 18Contents STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Contents 1 Electrical ratings 3 1.1 Protection features of gate-to-source zener diodes 4 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuit . 10 4 Package mechanical data 11 5 Packaging mechanical data 16 6 Revision history . 17 2/18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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