Product Information

ACS108-8SA-AP

ACS108-8SA-AP electronic component of STMicroelectronics

Datasheet
Triacs Overvoltage Projected AC Switch

Manufacturer: STMicroelectronics
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19: USD 0.3588 ea
Line Total: USD 6.82

0 - Global Stock
MOQ: 19  Multiples: 1
Pack Size: 1
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0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4000
Multiples : 2000

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ACS108-8SA-AP
STMicroelectronics

4000 : USD 0.6395
6000 : USD 0.6342
8000 : USD 0.629
10000 : USD 0.6239
12000 : USD 0.6186
20000 : USD 0.6132
30000 : USD 0.608
50000 : USD 0.6027
100000 : USD 0.5974

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Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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ACS108-8SA-AP
STMicroelectronics

1 : USD 1.5017
10 : USD 0.7077
100 : USD 0.3842

0 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 19
Multiples : 1

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ACS108-8SA-AP
STMicroelectronics

19 : USD 0.3588

     
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ACS108-8SA Datasheet 0.8 A - 800 V overvoltage protected AC switch (ACS) Features Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar technology High noise immunity against static dV/dt and IEC 61000-4-4 burst Needs no external protection snubber or varistor Reduces component count by up to 80% and Interfaces directly with the micro- COM controller G OUT Common package tab connection supports connection of several alternating current switches on the same cooling pad TO-92 V gives headroom before clamping then crowbar action CL OUT Applications Alternating current on/off static switching in appliances and industrial control systems G Driving low power high inductive or resistive loads like: relay, valve, solenoid, dispenser pump, fan, low power motor, door lock, air flow dumper COM COM Common drive reference to connect lamp to the mains OUT Output to connect to the load. G Gate input to connect to the controller through gate resistor Description The ACS108-8SA belongs to the AC switch range (built with A. S. D. technology). Product status link This high performance switch can control a load of up to 0.8 A. ACS108-8SA This device switch includes an overvoltage crowbar structure to absorb the inductive turn-off energy, and a gate level shifter driver to separate the digital controller from Product summary the main switch. It is triggered with a negative gate current flowing out of the gate pin. I 0.8 A T(RMS) Note: : A.S.D. is a registered trademark of STMicroelectronics V , V 800 V DRM RRM Note: TM: ACS is a trademark of STMicroelectronics I 10 mA GT DS12901 - Rev 1 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.ACS108-8SA Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C, unless otherwise specified) amb Symbol Parameter Value Unit T = 64 C 0.45 amb I On-state rms current (full sine wave), S = 5cm A T(RMS) T = 76 C 0.8 tab t = 20 ms 13 p Non repetitive surge peak on-state current I A TSM T initial = 25 C, (full cycle sine wave) j t = 16.7 ms 13.7 p 2 2 2 t = 10 ms I t I t for fuse selection 1.1 A s p Critical rate of rise on-state current I = 2 x I , tr 100 ns f = 120 Hz, T = 125 C dI/dt 100 A/s G GT j (1) V Non repetitive line peak pulse voltage 2 kV PP P Average gate power dissipation T = 125 C 0.1 W G(AV) j V Peak positive gate voltage T = 125 C 10 V GM j I Peak gate current (t = 20 s) T = 125 C 1 A GM p j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -30 to +125 C j 1. according to test described by standard IEC 61000-4-5, see Figure 15. Overvoltage ruggedness test circuit for resistive and inductive loads, T = 25 C (conditions equivalent to IEC 61000-4-5 standard) for conditions amb Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrant Value Unit (1) I Max. 10 mA GT V = 12 V, R = 33 II - III OUT L V Max. 1.0 V GT V V = V , R = 3.3 k, T = 125 C II - III Min. 0.15 V GD OUT DRM L j I I = 100 mA Max. 10 mA H OUT I I = 1.2 x I Max. 25 mA L G GT V = 402 V, gate open, T = 125 C 2000 OUT j dV/dt Min. V/s V = 536 V, gate open, T = 125 C 400 OUT j (dI/dt)c Without snubber (15 V/s), T = 125 C, turn-off time 20 ms Min. 2 A/ms j V I = 0.1 mA, t = 1 ms Min. 850 V CL CL p 1. Minimum I is guaranteed at 10% of I max. GT GT DS12901 - Rev 1 page 2/13

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