BAR46AFILM STMicroelectronics

BAR46 BAR46AFILM SMALL SIGNAL SCHOTTKY DIODES FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP K A SURFACE MOUNT DEVICE K1 N.C. A K2 BAR46 BAR46A DESCRIPTION High voltage Schottky rectifier suited for SLIC pro- tection during the card insertion operation. SOT-23 (Plastic) ABSOLUTE RATINGS(limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF Continuous forward current 150 mA P Power dissipation (note 1) Tamb = 25C 230 mW tot T Maximum storage temperature range - 65 to +150 C stg Tj Maximum operating junction temperature * 150 C T Maximum temperature for soldering during 10s 260 C L Note 1: for double diodes, Ptot is the total dissipation of both diodes. dPtot 1 * : < thermal runaway condition for a diode on its own heatsink dTj Rth(j- a) THERMAL RESISTANCE Symbol Parameter Value Unit Rth(j-a) Junction-ambient * 500 C/W * Mounted on epoxy board, with recommended pad layout. September 2002 - Ed: 3A 1/5BAR46 /BAR46AFILM ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test conditions Min. Typ. Max. Unit V Tj = 25 C I = 100 A 100 V BR R V * Tj = 25 C I = 0.1 mA 0.25 V F F Tj = 25 C I = 10 mA 0.45 F Tj = 25 C IF = 250 mA 1 I ** Tj = 25 C V = 1.5 V 0.5 A R R Tj = 60 C 5 Tj = 25 C V = 10 V 0.8 R Tj = 60 C 7.5 Tj = 25 C V = 50 V 2 R Tj = 60 C 15 Tj = 25 C V = 75 V 5 R Tj = 60 C 20 Pulse test : * tp = 380s < 2% ** tp = 5 ms, < 2% DYNAMIC CHARACTERISTICS Symbol Test conditions Min. Typ. Max. Unit C Tj = 25 C V = 0 V F = 1MHz 10 pF R Tj = 25 C V = 1 V 6 R 2/5