Product Information

BAS19 RF

BAS19 RF electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching SOT-23, 100V, 0.2A, Switching Diode & Array
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2415 ea
Line Total: USD 0.24

7793 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
7793 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

BAS19 RF
Taiwan Semiconductor

1 : USD 0.2415
10 : USD 0.1748
100 : USD 0.0943
1000 : USD 0.0506
3000 : USD 0.0425
9000 : USD 0.0379
24000 : USD 0.0357
45000 : USD 0.0299
99000 : USD 0.0241

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
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Additional Infomation About Product

BAS19/BAS20 Taiwan Semiconductor 200mA, 100-150V Surface Mount Fast Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 200 mA F High surge current capability V 100-150 V RRM Moisture sensitivity level: level 1, per J-STD-020 V at I =200mA 1.25 V RoHS Compliant F F Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package SOT-23 Configuration Single die APPLICATIONS Switching mode power supply (SMPS) MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 0.5 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAS19 BAS20 UNIT Marking code on the device JP JR Repetitive peak reverse voltage V 100 150 V RRM Power dissipation P 250 mW D Forward current I 200 mA F Junction temperature range T -65 to +150 C J Storage temperature range T -65 to +150 C STG 1 Version: C2001 BAS19/BAS20 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction to ambient thermal resistance R 500 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT 1.00 I = 100mA, T = 25C F J (1) - Forward voltage V V F 1.25 I = 200mA, T = 25C F J I = 100 A, R 100 - BAS19 T = 25C J Reverse voltage V V R I = 100 A, R 150 - BAS20 T = 25C J V = 100 V, R BAS19 T = 25C J (2) - 0.1 Reverse current I A R V = 150 V, R BAS20 T = 25C J f=1 MHz, V =0V - 5 Junction capacitance C pF R J I =I = 30mA, I = 0.1 x I - 50 Reverse recovery time F R RR R t ns rr Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BASxx RF SOT-23 3K / 7 Reel BASxx RFG SOT-23 3K / 7 Reel BASxx R5 SOT-23 10K / 13 Reel BASxx R5G SOT-23 10K / 13 Reel BASxx-B0 RF SOT-23 3K / 7 Reel BASxx-B0 RFG SOT-23 3K / 7 Reel BASxx-B0 R5 SOT-23 10K / 13 Reel BASxx-B0 R5G SOT-23 10K / 13 Reel Notes: 1.x is device code from19 to20 2. G means green compound (halogen free) 2 Version: C2001

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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