BAT30F3 STMicroelectronics

BAT30F3 Small signal Schottky diode Features very low conduction losses negligible switching losses low capacitance diode Flip Chip, 2-bump package Complies with the following standards Flip Chip IEC 61000-4-2 level 1: (2 bumps) 2kV (air discharge) 2kV (contact discharge) Figure 1. Pin configuration (bump side) Description 1 The BAT30F3 is a Schottky diode in a 2-bump, Flip-Chip package. A This device is specially suited for switching mode applications needing a low forward voltage drop diode. The electrical parameters are guaranteed across the operating temperature range B (- 30 C to 85 C). Figure 2. Schematic 1 A B October 2010 Doc ID 16915 Rev 2 1/10 www.st.com 10 Characteristics BAT30F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Peak pulse voltage: V IEC 61000-4-2 air discharge 2 kV PP IEC 61000-4-2 contact discharge 2 V Repetitive peak reverse voltage 20 V RRM (1) T Storage temperature range -55 to +150 C stg T Operating junction temperature range -30 to +85 C op 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 2. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V = 6 V - - 2 R 25 C V = 20 V - - 6 R V = 6 V - - 20 R (1) I Reverse leakage current 55 C A R V = 20 V - - 55 R V = 6 V - - 145 R 85 C V = 20 V - - 360 R I = 0.1 mA - - 200 F I = 1 mA - - 270 F I = 10 mA - - 340 F 25 C I = 100 mA - - 440 F I = 200 mA - - 500 F I = 300 mA - - 560 F V Forward voltage drop mV F I = 0.1 mA - - 300 F I = 1 mA - - 355 F I = 10 mA - - 415 F - 30 C I = 100 mA - - 495 F I = 200 mA - - 545 F I = 300 mA - - 600 F 1. Pulse test: t = 5 ms, < 2% p 2/10 Doc ID 16915 Rev 2