Product Information

BDW93C

BDW93C electronic component of STMicroelectronics

Datasheet
Transistor: NPN; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Manufacturer: STMicroelectronics
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Price (USD)

1: USD 1.092 ea
Line Total: USD 1.09

1 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BDW93C
STMicroelectronics

1 : USD 1.092
3 : USD 0.9321
10 : USD 0.7826
31 : USD 0.5395
84 : USD 0.5109

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Av Current Ic
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Full Power Rating Temperature
Hfe Min
No. Of Transistors
Power Dissipation Ptot Max
Termination Type
Transistor Type
Voltage Vcbo
Kind Of Package
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Additional Infomation About Product

BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The BDW93C is a silicon Epitaxial-Base NPN TO-220 power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDW93C PNP BDW94B BDW94C Collector-Base Voltage (I = 0) 80 100 V V CBO E V Collector-Emitter Voltage (I = 0) 80 100 V CEO B I Collector Current 12 A C I Collector Peak Current 15 A CM I Base Current 0.2 A B o P 80 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/6 October 1999BDW93C/BDW94B/BDW94C THERMAL DATA o R Thermal Resistance Junction-case 1.56 C/W thj-case o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BDW94B V = 80 V 100 A CBO CB Current (I = 0) for BDW93C/94C V = 100 V 100 A E CB o T = 150 C case BDW94B for V = 80 V 5 mA CB for BDW93C/94C V = 100 V 5 mA CB I Collector Cut-off for BDW94B V = 80 V 1 mA CEO CE Current (I = 0) for BDW93C/94C V = 100 V 1 mA B CE I Emitter Cut-off Current V = 5 V 2mA EBO EB (I = 0) C V * Collector-Emitter I = 100 mA CEO(sus) C Sustaining Voltage for BDW94B 80 V (I = 0) for BDW93C/94C 100 V B V * Collector-Emitter I = 5 A I = 20 mA 2 V CE(sat) C B Saturation Voltage I = 10 A I = 100 mA 3 V C B V * Base-Emitter I = 5 A I = 20 mA 2.5 V BE(sat) C B Saturation Voltage I = 10 A I = 100 mA 4 V C B h * DC Current Gain I = 3 A V = 3 V 1000 FE C CE I = 5 A V = 3 V 750 20K C CE I = 10 A V = 3 V 100 C CE V * Parallel-diode Forward I = 5 A 1.3 2 V F F Voltage I = 10 A 1.8 4 V F h Small Signal Current I = 1 A V = 10 V fe C CE Gain f = 1 MHz 20 * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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