BDW93C STMicroelectronics

BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The BDW93C is a silicon Epitaxial-Base NPN TO-220 power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDW94C. Also BDW94B is a PNP type. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDW93C PNP BDW94B BDW94C Collector-Base Voltage (I = 0) 80 100 V V CBO E V Collector-Emitter Voltage (I = 0) 80 100 V CEO B I Collector Current 12 A C I Collector Peak Current 15 A CM I Base Current 0.2 A B o P 80 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/6 October 1999BDW93C/BDW94B/BDW94C THERMAL DATA o R Thermal Resistance Junction-case 1.56 C/W thj-case o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BDW94B V = 80 V 100 A CBO CB Current (I = 0) for BDW93C/94C V = 100 V 100 A E CB o T = 150 C case BDW94B for V = 80 V 5 mA CB for BDW93C/94C V = 100 V 5 mA CB I Collector Cut-off for BDW94B V = 80 V 1 mA CEO CE Current (I = 0) for BDW93C/94C V = 100 V 1 mA B CE I Emitter Cut-off Current V = 5 V 2mA EBO EB (I = 0) C V * Collector-Emitter I = 100 mA CEO(sus) C Sustaining Voltage for BDW94B 80 V (I = 0) for BDW93C/94C 100 V B V * Collector-Emitter I = 5 A I = 20 mA 2 V CE(sat) C B Saturation Voltage I = 10 A I = 100 mA 3 V C B V * Base-Emitter I = 5 A I = 20 mA 2.5 V BE(sat) C B Saturation Voltage I = 10 A I = 100 mA 4 V C B h * DC Current Gain I = 3 A V = 3 V 1000 FE C CE I = 5 A V = 3 V 750 20K C CE I = 10 A V = 3 V 100 C CE V * Parallel-diode Forward I = 5 A 1.3 2 V F F Voltage I = 10 A 1.8 4 V F h Small Signal Current I = 1 A V = 10 V fe C CE Gain f = 1 MHz 20 * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/6