BDW93CFP STMicroelectronics

BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT) 3 2 1 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL T0-220FP EQUIPMENT DESCRIPTION The BDW93CFP is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-220FP fully molded insulated package. It is intented for use in power linear INTERNAL SCHEMATIC DIAGRAM and switching applications. The complementary PNP type is the BDW94CFP. R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDW93CFP PNP BDW94CFP V Collector-Base Voltage (I = 0) 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 100 V I Collector Current 12 A C I Collector Peak Current 15 A CM I Base Current 0.2 A B o P 33 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 September 2001 BDW93CFP / BDW94CFP THERMAL DATA o R Thermal Resistance Junction-case Max 3.8 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 100 V 100 A CBO CB o Current (I = 0) V = 100 V T = 150 C 5 mA E CB case I Collector Cut-off V = 80 V 1 mA CEO CE Current (I = 0) B I Emitter Cut-off Current V = 5 V 2mA EBO EB (I = 0) C VCEO(sus)* Collector-Emitter IC = 100 mA 100 V Sustaining Voltage (IB = 0) V * Collector-Emitter I = 5 A I = 20 mA 2 V CE(sat) C B Saturation Voltage I = 10 A I = 100 mA 3 V C B V * Base-Emitter I = 5 A I = 20 mA 2.5 V BE(sat) C B Saturation Voltage IC = 10 A IB = 100 mA 4 V h * DC Current Gain I = 3 A V = 3 V 1000 FE C CE I = 5 A V = 3 V 750 20000 C CE I = 10 A V = 3 V 100 C CE V * Parallel-diode Forward I = 5 A 1.3 2 V F F Voltage I = 10 A 1.8 4 V F h Small Signal Current I = 1 A V = 10 V fe C CE Gain f = 1 MHz 20 * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4