Product Information

BDW94CFP

BDW94CFP electronic component of STMicroelectronics

Datasheet
Transistor: PNP; bipolar; Darlington; 100V; 12A; 33W; TO220FP

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.073 ea
Line Total: USD 1.07

12 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10670 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BDW94CFP
STMicroelectronics

1 : USD 0.9301

1 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

BDW94CFP
STMicroelectronics

1 : USD 1.6848
10 : USD 1.4719
30 : USD 1.3447
100 : USD 1.2167
500 : USD 1.1569
1000 : USD 1.1303

12 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BDW94CFP
STMicroelectronics

1 : USD 1.04
3 : USD 0.9321
10 : USD 0.8229
22 : USD 0.7592
50 : USD 0.7384

     
Manufacturer
Product Category
Kind Of Transistor
Polarisation
Mounting
Case
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
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BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT) 3 2 1 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL T0-220FP EQUIPMENT DESCRIPTION The BDW93CFP is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-220FP fully molded insulated package. It is intented for use in power linear INTERNAL SCHEMATIC DIAGRAM and switching applications. The complementary PNP type is the BDW94CFP. R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDW93CFP PNP BDW94CFP V Collector-Base Voltage (I = 0) 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 100 V I Collector Current 12 A C I Collector Peak Current 15 A CM I Base Current 0.2 A B o P 33 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 September 2001 BDW93CFP / BDW94CFP THERMAL DATA o R Thermal Resistance Junction-case Max 3.8 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 100 V 100 A CBO CB o Current (I = 0) V = 100 V T = 150 C 5 mA E CB case I Collector Cut-off V = 80 V 1 mA CEO CE Current (I = 0) B I Emitter Cut-off Current V = 5 V 2mA EBO EB (I = 0) C VCEO(sus)* Collector-Emitter IC = 100 mA 100 V Sustaining Voltage (IB = 0) V * Collector-Emitter I = 5 A I = 20 mA 2 V CE(sat) C B Saturation Voltage I = 10 A I = 100 mA 3 V C B V * Base-Emitter I = 5 A I = 20 mA 2.5 V BE(sat) C B Saturation Voltage IC = 10 A IB = 100 mA 4 V h * DC Current Gain I = 3 A V = 3 V 1000 FE C CE I = 5 A V = 3 V 750 20000 C CE I = 10 A V = 3 V 100 C CE V * Parallel-diode Forward I = 5 A 1.3 2 V F F Voltage I = 10 A 1.8 4 V F h Small Signal Current I = 1 A V = 10 V fe C CE Gain f = 1 MHz 20 * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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