BTA20 20 A Snubberless Triacs Datasheet - production data Features A2 I = 20 A T(RMS) V , V = 600 and 700 V DRM RRM G I (max) = 35 and 50 mA GT (Q1) A1 Description The BTA20 Triacs use high performance glass passivated chip technology. The Snubberless A1 concept offers suppression of the RC network and A2 G is suitable for applications such as phase control and static switching on inductive or resistive load. TO-220AB Insulated Thanks to their clip assembly technique, the BTA20 Triacs provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500 V rms) complying with UL standards (File ref.: E81734). TM: Snubberless is a trademark of STMicroelectronics. September 2014 DocID2932 Rev 4 1/8 This is information on a product in full production. www.st.comCharacteristics BTA20 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit I On-state rms current (full sine wave) T = 70 C 20 A T(RMS) c F = 50 Hz t = 10 ms 210 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25C) j F = 60 Hz t = 8.3 ms 200 ItI t Value for fusing t = 10 ms 200 A s p Repetitive 50 Critical rate of rise of on-state current F = 50 Hz dI/dt T = 125 C A/s j I = 2 x I , t 100 ns G GT r Non repetitive 100 V , V /V DSM DRM RRM Non repetitive peak off-state voltage t = 10 ms T = 25 C V p j 100 V RSM I Peak gate current t = 20 s T = 125 C 4 A GM p j V Peak positive gate voltage t = 20 s 16 V GM p P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j BTA20 Symbol Test conditions Quadrant Unit BW CW Min. 2 1 (1) I ALL mA GT V = 12 V, R = 33 Max. 50 35 D L V ALL Max. 1.5 V GT V V = V R = 3.3 k, T = 125 C ALL Min. 0.2 V GD D DRM, L j (2) I I = 500 mA, gate open Max. 75 50 mA H T I - III 50 - Typ. I I = 1.2 I II 90 - mA L G GT I - II - III Max. - 80 Typ. 750 500 (2) dV/dt V = 67% V gate open T = 125 C V/s D DRM, j Min. 500 250 Typ. 36 22 (2) (dV/dt)c (dI/dt)c = 20 A/ms T = 125 C V/s j Min. 18 11 1. Minimum I is guaranteed at 5% of I max. GT GT 2. For both polarities of A2 referenced to A1. 2/8 DocID2932 Rev 4