BTA24, BTB24, BTA25 BTA26, BTB26, T25 25 A standard and Snubberless triacs Features A2 High current triac G Low thermal resistance with clip bonding A1 High commutation (4 quadrant) or very high A2 commutation (3 quadrant) capability BTA series UL1557 certified (File ref: 81734) A1 A2 A1 Packages are RoHS (2002/95/EC) compliant G A2 G TO-220AB Insulated TO-220AB Applications (BTA24) (BTB24) Applications include the ON/OFF function in A1 G A2 applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, A1 motor speed controllers, and silmilar. A2 G The snubberless versions (BTA/BTB...W and T25 RD91 TOP3 Insulated series) are especially recommended for use on (BTA25) (BTA26) inductive loads, due to their high commutation performances. The BTA series provides an A2 A2 insulated tab (rated at 2500 V ). RMS A1 A2 Description A1 G A2 G Available either in through-hole or surface-mount 2 D PAK TOP3 packages, the BTA24, BTB24, BTA25, BTA26, (T25) (BTB26) BTB26 and T25 triac series is suitable for general purpose mains power AC switching. Table 1. Device summary (1) (1) (1) Symbol Parameter BTA24 BTB24 BTA25 BTA26 BTB26 T25 Unit RMS on-state I 25 25 25 25 25 25 A T(RMS) current Repetitive peak (2) V /V 600 / 800 600 / 800 600 / 800 600 / 800 600 600 / 800 V DRM RRM off-state voltage Triggering gate I (Snubberless) 35 / 50 35 / 50 50 35 / 50 - 35 mA GT current Triggering gate I (Standard) -50 50 50 50 - mA GT current 1. Insulated packages 2. 600 V version available only with I = 50 mA (Snubberless and Standard) GT TM: Snubberless is a trademark of STMicroelectronics July 2007 Rev 10 1/12 www.st.com 12Characteristics BTA24, BTB24, BTA25, BTA26, BTB26, T25 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit TOP3 T = 105 C c 2 D PAK / T = 100 C c TO-220AB I RMS on-state current (full sine wave) 25 A T(RMS) RD91 Ins/ T = 100 C c TOP3 Ins. TO-220AB Ins. T = 75 C c F = 50 Hz t = 20 ms 250 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 260 ItI t Value for fusing t = 10 ms 340 A s p Critical rate of rise of on-state current dI/dt F = 120 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r Non repetitive surge peak off-state V /V DRM RRM V /V t = 10 ms T = 25 C V DSM RSM p j voltage + 100 I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j Table 3. Electrical characteristics (T = 25 C, unless otherwise specified), Snubberless and j logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W T25 BTA/BTB Symbol Test Conditions Quadrant Unit T2535 CW BW (1) I I - II - III MAX. 35 35 50 mA GT V = 12 V R = 33 D L V I - II - III MAX. 1.3 V GT V = V R = 3.3 k D DRM L V I - II - III MIN. 0.2 V GD T = 125 C j (2) I I = 500 mA MAX. 50 50 75 mA H T I - III 70 70 80 I I = 1.2 I MAX. mA L G GT II 80 80 100 (2) dV/dt V = 67 %V gate open T = 125 C MIN. 500 500 1000 V/s D DRM j (2) (dI/dt)c Without snubber T = 125 C MIN. 13 13 22 A/ms j 1. minimum I is guaranted at 5% of I max. GT GT 2. for both polarities of A2 referenced to A1. 2/12