BTB04-600SL STMicroelectronics

BTB04-600SL STANDARD 4A TRIAC MAIN FEATURES A2 Symbol Value Unit I 4A T(RMS) G V /V 600 V DRM RRM A1 A2 I 10 mA GT(Q1) DESCRIPTION The BTB04-600SL 4 quadrants TRIAC is intended A1 for general purpose applications where high surge A2 G current capability is required, such as lighting, corded power tools, industrial. TO-220AB This TRIAC features a gate current capability sensitivity of 10mA. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit I RMS on-state current (full sine wave) TO-220AB Tc = 105C 4 A T(RMS) I Non repetitive surge peak on-state current F=50Hz t=20ms 35 A TSM (full cycle, Tj initial = 25C) F = 60 Hz t = 16.7 ms 38 2 2 2 ItI t value for fusing tp = 10ms 6 A s dI/dt Critical rate of rise of on-state current Repetitive F = 100Hz 50 A/s I =2xI ,tr 100 ns G GT I Peak gate tp = 20s Tj = 125C 4 A GM P Average gate power dissipation Tj = 125C 0.5 W G(AV) Tstg Storage junction temperature range -40 to +150 C Tj Operating junction temperature range -40 to +125 March 2002 - Ed: 1A 1/5BTB04-600SL ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol Test conditions Quadrant Value Unit (1) I V = 12V R =30 I - II - III MAX. 10 mA GT D L IV MAX. 25 V V = 12V R =30 ALL MAX. 1.3 V GT D L V V =V R = 3.3k Tj = 125C ALL MIN. 0.2 V GD D DRM L (2) I I = 100mA MAX. 15 mA H T I I = 1.2I I - III - IV MAX. 15 mA L G GT II 25 (2) dV/dt V = 67% V gate open Tj = 125C MIN. 75 V/s D DRM (2) (dV/dt)c (dI/dt)c = 1.8A/ms Tj = 125C MIN. 10 V/s STATIC CHARACTERISTICS Symbol Test Conditions Value Unit (2) V I = 5A tp = 380s Tj = 25C MAX. 1.5 V TM TM (2) V Threshold voltage Tj = 125C MAX. 0.85 V TO (2) Rd Dynamic resistance Tj = 125C MAX. 100 m I V =V Tj = 25C MAX. 5 A DRM DRM RRM I Tj = 125C 1 mA RRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1. THERMAL RESISTANCE Symbol Parameter Value Unit Rth (j-c) Junction to case (AC) 3 C/W Rth (j-a) Junction to ambient 60 C/W 2/5