BTB04-600TRG STMicroelectronics

BTA04 T/D/S/A BTB04 T/D/S/A SENSITIVE GATE TRIACS A2 FEATURES n Very low I = 10mA max GT n Low I = 15mA max H G n BTA Family: A1 Insulating voltage = 2500V (RMS) (UL recognized: E81734) DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high per- formance glass passivated PNPN devices. A1 These parts are suitables for general purpose ap- A2 plications where gate high sensitivity is required. G Application on 4Q such as phase control and static switching. TO-220AB ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit I RMS on-state current (360 conduction angle) BTA Tc = 90C 4 A T(RMS) BTB Tc = 95C I Non repetitive surge peak on-state current tp = 8.3ms 42 A TSM (Tj initial = 25C) tp = 10ms 40 2 2 2 ItI t value tp = 10ms 8 A s dI/dt Critical rate of rise of on-state current Repetitive 10 A/s Gate supply: I = 50mA dI /dt = 0.1A/s F = 50Hz G G Non repetitive 50 Tstg Storage and operating junction temperature range -40 to +150 C Tj -40 to +110 Tl Maximum lead soldering temperature during 10s at 4.5mm from case 260 C BTA / BTB04- Symbol Parameter Unit 400 T/D/S/A 600 T/D/S/A 700 T/D/S/A V 400 600 700 V DRM Repetitive peak off-state voltage Tj = 110C V RRM September 2001 - Ed: 1A 1/6 Obsolete Product(s) - Obsolete Product(s) BTA04 T/D/S/A BTB04 T/D/S/A THERMAL RESISTANCE Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 C/W Rth (j-c) DC Junction to case for DC BTA 4.4 C/W BTB 3.2 Rth (j-c) AC Junction to case for 360 conduction angle (F = 50Hz) BTA 3.3 C/W BTB 2.4 GATE CHARACTERISTICS (maximum values) P =1W P = 40W (tp = 20s) I = 4A (tp = 20s) V = 16V (tp = 20s) G(AV) GM GM GM ELECTRICAL CHARACTERISTICS BTA / BTB04 Symbol Test conditions Quadrant Unit TD S A I V = 12V (DC) R =33 Tj = 25C I - II - III MAX. 5 5 10 10 mA GT D L IV MAX. 5 10 10 25 V V = 12V (DC) R =33 Tj = 25C I - II - III - IV MAX. 1.5 V GT D L V V =V R = 3.3k Tj =110C I - II - III - IV MIN. 0.2 V GD D DRM L tgt V =V I = 40mA Tj = 25C I - II - III - IV TYP. 2 s D DRM G dI /dt = 0.5A/s G I I = 1.2I Tj = 25C I - III - IV TYP. 10 10 20 20 mA L G GT II 20 20 40 40 I*I = 100mA Gate open Tj = 25C MAX. 15 15 25 25 mA H T V *I = 5.5A tp = 380s Tj = 25C MAX. 1.65 V TM TM I V rated Tj = 25C MAX. 0.01 mA DRM DRM I V rated RRM RRM Tj = 110C MAX. 0.75 dV/dt * Linear slope up to Tj = 110C TYP. 10 10 - - V/s V = 67% V gate open D DRM MIN. - - 10 10 (dI/dt)c* (dI/dt)c = 1.8A/ms Tj = 110C TYP. 1 1 5 5 V/s * For either polarity of electrode A voltage with reference to electrode A 2 1 2/6 Obsolete Product(s) - Obsolete Product(s)