BTB06-800SWRG STMicroelectronics

BTB06-800SWRG electronic component of STMicroelectronics
BTB06-800SWRG STMicroelectronics
BTB06-800SWRG Triacs
BTB06-800SWRG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BTB06-800SWRG Triacs across the USA, India, Europe, Australia, and various other global locations. BTB06-800SWRG Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

Part No.BTB06-800SWRG
Manufacturer:STMicroelectronics
Category:Triacs
Description:STMicroelectronics Triacs 6A TRIACS
Datasheet:BTB06-800SWRG Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 1.875 ea
Line Total: USD 1.88 
Availability : 1230
  
Ship by Fri. 19 Jun to Tue. 23 Jun
QtyUnit Price
1$ 1.875
10$ 1.1052
100$ 0.6732
500$ 0.5357
1000$ 0.4697
2000$ 0.3982
5000$ 0.385
10000$ 0.3773
25000$ 0.3707
  

Availability1230
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.875
10$ 1.1052
100$ 0.6732
500$ 0.5357
1000$ 0.4697
2000$ 0.3982
5000$ 0.385
10000$ 0.3773
25000$ 0.3707

   
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off State Leakage Current Vdrm Idrm
On State Voltage
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
Non Repetitive On State Current
Factory Pack Quantity :
Rohs Mouser
Off-State Leakage Current Vdrm Idrm
Cnhts
Hts Code
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BTB06-800SWRG from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BTB06-800SWRG and other electronic components in the Triacs category and beyond.

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BTA06 and BTB06 Series 6A TRIACS SNUBBERLESS, LOGIC LEVEL & STANDARD Table 1: Main Features A2 Symbol Value Unit I 6A T(RMS) G A1 V /V 600 and 800 V DRM RRM I 5 to 50 mA GT (Q ) 1 A2 DESCRIPTION Available either in through-hole or surface-mount A1 packages, the BTA06 and BTB06 triac series is A1 A2 A2 G G suitable for general purpose AC switching. They can be used as an ON/OFF function in applica- TO-220AB Insulated TO-220AB tions such as static relays, heating regulation, in- (BTA06) (BTB06) duction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... Table 2: Order Codes The snubberless and logic level versions (BTA/ Part Number Marking BTB...W) are specially recommended for use on BTA06-xxxxxRG See page table 8 on inductive loads, thanks to their high commutation BTB06-xxxxxRG page 6 performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V ) complying with UL standards (File ref.: RMS E81734). Table 3: Absolute Maximum Ratings Symbol Parameter Value Unit T = 110C TO-220AB c RMS on-state current (full sine I 6A T(RMS) wave) T = 105C TO-220AB Ins. c F = 50 Hz t = 20 ms 60 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25C) j F = 60 Hz t = 16.7 ms 63 t = 10 ms 21 ItI t Value for fusing A s p Critical rate of rise of on-state cur- T = 125C dI/dt F = 120 Hz 50 A/s j rent I = 2 x I , t 100 ns G GT r I t = 20 s T = 125C Peak gate current 4A GM p j P T = 125C Average gate power dissipation 1W G(AV) j T - 40 to + 150 stg Storage junction temperature range C Operating junction temperature range T - 40 to + 125 j February 2006 REV. 6 1/7BTA06 and BTB06 Series Tables 4: Electrical Characteristics (T = 25C, unless otherwise specified) j SNUBBERLESS and Logic Level (3 quadrants) BTA06 / BTB06 Symbol Test Conditions Quadrant Unit TW SW CW BW I (1) I - II - III MAX. 5 10 35 50 mA GT V = 12 V R = 30 D L V I - II - III MAX. 1.3 V GT V = V R = 3.3 k D DRM L V I - II - III MIN. 0.2 V GD T = 125C j I (2) I = 100 mA MAX. 10 15 35 50 mA H T I - III 10 25 50 70 I I = 1.2 I MAX. mA L G GT II 15 30 60 80 V = 67 %V gate open T = 125C dV/dt (2) MIN. 20 40 400 1000 V/s D DRM j (dV/dt)c = 0.1 V/s T = 125C 2.7 3.5 - - j (dV/dt)c = 10 V/s T = 125C (dI/dt)c (2) MIN. 1.2 2.4 - - A/ms j Without snubber T = 125C -- 3.5 5.3 j Standard (4 quadrants) BTA06 / BTB06 Symbol Test Conditions Quadrant Unit CB I - II - III 25 50 I (1) MAX. mA GT IV 50 100 V = 12 V R = 30 D L V ALL MAX. 1.3 V GT V V = V R = 3.3 k T = 125C ALL MIN. 0.2 V GD D DRM L j I (2) I = 500 mA MAX. 25 50 mA H T I - III - IV 40 50 I I = 1.2 I MAX. mA L G GT II 80 100 V = 67 %V gate open T = 125C dV/dt (2) MIN. 200 400 V/s D DRM j (dI/dt)c = 2.7 A/ms T = 125C (dV/dt)c (2) MIN. 5 10 V/s j Table 5: Static Characteristics Symbol Test Conditions Value Unit V (2) I = 8.5 A t = 380 s T = 25C MAX. 1.55 V TM TM p j V (2) T = 125C Threshold voltage MAX. 0.85 V t0 j R (2) T = 125C Dynamic resistance MAX. 60 m d j T = 25C 5A I j DRM V = V MAX. DRM RRM I T = 125C RRM 1mA j Note 1: minimum I is guaranted at 5% of I max. GT GT Note 2: for both polarities of A2 referenced to A1. 2/7

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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