Product Information

BZW06-15B

BZW06-15B electronic component of STMicroelectronics

Datasheet
Diode: transil; 600W; 17.1V; 24A; bidirectional; ±5%; DO15

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.147 ea
Line Total: USD 147

21340 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
294 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

BZW06-15B
STMicroelectronics

1 : USD 0.559
10 : USD 0.4979
25 : USD 0.4446
83 : USD 0.1976
227 : USD 0.1872

21340 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1000
Multiples : 1000

Stock Image

BZW06-15B
STMicroelectronics

1000 : USD 0.147
2000 : USD 0.1372
5000 : USD 0.1365
10000 : USD 0.1337

     
Manufacturer
Product Category
Breakdown Voltage
Case
Semiconductor Structure
Mounting
Kind Of Package
Type Of Diode
Max Forward Impulse Current
Leakage Current
Max Off-State Voltage
Tolerance
Power Dissipation
LoadingGif

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BZW06 Transil Datasheet - production data Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS technology and low voltage supplied ICs. Table 1: Order codes Part number Marking BZW06-xxxx See Table 4. Features 600 W peak pulse power (10/1000 s) Stand-off voltage range 5.8 to 376 V Unidirectional and bidirectional types Low clamping factor Fast response time UL recognized, file: E136224 April 2017 DocID2972 Rev 4 1/9 www.st.com This is information on a product in full production. Characteristics BZW06 1 Characteristics Table 2: Absolute maximum ratings (Tamb = 25 C) Symbol Parameter Value Unit P Peak pulse power T initial = T 600 pp j amb W P Power dissipation on infinite heatsink Tamb = 75 C 1.7 tp = 10 ms Non repetitive surge peak forward current IFSM 100 A T initial = T j amb Tstg Storage junction temperature range -65 to +175 Tj Operating junction temperature range -55 to +175 C T Maximum temperature for soldering during 10 s at 5 mm from case 260 L Figure 1: Electrical characteristics (definitions) Table 3: Thermal resistances Symbol Parameter Value Unit R Junction to leads 60 th(j-l) C/W Junction to ambient on printed circuit. L = 10 mm Rth(j-a) lead 100 2/9 DocID2972 Rev 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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