Product Information

ESDA37WY

ESDA37WY electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes Automotive dual Transil array for ESD protection

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0908 ea
Line Total: USD 0.09

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 9000
Multiples : 1

Stock Image

ESDA37WY
STMicroelectronics

9000 : USD 0.1179
15000 : USD 0.1171
24000 : USD 0.1083
45000 : USD 0.1047

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

ESDA37WY
STMicroelectronics

1 : USD 1.033
10 : USD 0.8373
100 : USD 0.2284
500 : USD 0.1707

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Factory Pack Quantity :
Subcategory
Tradename
Vf - Forward Voltage
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ESDA37WY Datasheet Automotive dual Transil array for ESD protection Features AEC-Q101 qualified Dual unidirectional Transil functions 3 Low leakage current (I max. < 1 A at V ) R RM 2 300 W peak pulse power (8/20 s) 1 High ESD protection level: up to 25 kV SOT323-3L High integration Suitable for high density boards Complies with the following standards/ ISO 10605: C = 330 pF, R = 330 : 30 kV (air discharge), 30 kV (contact discharge) 1 ISO 7637-3 fast transient: Pulse a: V = -150 V, Pulse b: V = +100 V S S ISO 7637-3 slow transient: Positive pulse: V = +85 V, Negative pulse: V = S S 3 -85 V 2 Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Entertainment Signal communications Connectivity Product status Comfort and convenience ESDA37WY Description This device is a diode array designed to protect 1 line or 2 lines against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required It can also be used as bidirectional suppressor by connecting only pin 1 and 2. DS12297 - Rev 2 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.ESDA37WY ESDA37WY Characteristics 1 ESDA37WY Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) V ISO 10605 (C = 330 pF, R = 330 ): kV Peak pulse voltage pp 30 Contact discharge 30 Air discharge 30 ISO 10605 (C = 150 pF, R = 330 ): 30 Contact discharge Air discharge P Peak pulse power (8/20 s) 300 W pp I Peak pulse current (8/20 s) 6.3 A pp T Maximum operating junction temperature range -55 to 175 C j T Storage junction temperature range -65 to 175 C stg T Maximum temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 1. Electrical characteristics (definitions) II Symbol Parameter IIFF V = Breakdown voltage BR V = Clamping voltage CL V = Stand-off voltage RM VVBRBR I = Leakage current VVFF RM VVRMRM VVclcl I = Forward current F VV IIRMRM I = Peak pulse current PP I = Breakdown current R V = Forward voltage drop F C = Capacitance SlopeSlope = 1/R = 1/Rdd R = Dynamic impedance d IIPPPP T = Voltage temperature Table 2. Electrical characteristics (T = 25 C) amb (1) (2) V at I I at V C V at I R T BR R RM RM d line F F Order code Min. Max. Max. Typ. Max. Typ. at 0 V bias Max. -4 V V mA A V m pF V mA 10 /C ESDA37WY 37 43.3 1 1 36 2400 11 48 0.9 10 1. Square pulse I = 15 A, t = 2.5 s pp p 2. V = T x (T -25 C) x V (25 C) BR amb BR DS12297 - Rev 2 page 2/12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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