ESDA5V3L STMicroelectronics

ESDAL Dual Transil array for ESD protection Datasheet - production data Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Entertainment Signal communications Connectivity Comfort and convenience Description SOT23-3L This device is a diode array designed to protect 1 line or 2 lines against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving Features are required. Unidirectional device It can also be used as bidirectional suppressor by Low leakage current (IR max. < 20 A at connecting only pin 1 and 2. V ) BR Figure 1: Functional diagram 300 W peak pulse power (8/20 s) Benefits High ESD protection level: up to 30 kV 1 High integration Suitable for high density boards 3 Complies with the following standards IEC 61000-4-2 (exceeds level 4) : 2 30 kV (air discharge) 30 kV (contact discharge) July 2017 DocID7058 Rev 5 1/11 www.st.com This is information on a product in full production. Characteristics ESDAL 1 Characteristics Table 1: Absolute maximum ratings (Tamb = 25 C) Symbol Parameter Value Unit IEC 61000-4-2: (1) Contact discharge 30 Vpp Peak pulse voltage kV Air discharge 30 Peak pulse power (8/20 s) Ppp 300 W ESDA5V3L 25 ESDA6V1L 18 I Peak pulse current (8/20 s) ESDA14V2L 14 A pp ESDA25L 7 6.3 ESDA37L T Operating junction temperature range -40 to 150 C j Tstg Storage junction temperature range -65 to 150 C Maximum lead temperature for soldering during 10 s at 5 mm from TL 260 C case Notes: (1) For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2: Electrical characteristics (definitions) I Symbol Parameter IF V = Breakdown voltage BR V = Clamping voltage CL V = Stand-off voltage RM VBR I = Leakage current VF RM Vcl VRM I = Forward current F V IRM I = Peak pulse current PP I = Breakdown current R V = Forward voltage drop F C = Capacitance Slope = 1/Rd R = Dynamic impedance d IPP T = Voltage temperature 2/11 DocID7058 Rev 5