ESDA6V1-5SC6 STMicroelectronics

ESDA6V1-5SC6 TRANSIL ARRAY FOR ESD PROTECTION ASD MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as: Computers Printers Communication systems Cellular phone handsets and accessories Other telephone set Set top boxes SOT23-6L (SC-59) FEATURES Table 1: Order Code 5 Unidirectional Transil Functions Part Number Marking Low leakage current: I max. < 1A R ESDA6V1-5SC6 EC62 Breakdown voltage: V = 6.1V min. BR Figure 1: Functional Diagram DESCRIPTION The ESDA6V1-5SC6 is a 5-bit wide monolithic suppressor which is designed to protect against ESD components connected to data and transmis- I/O5 I/O1 sion lines. Gnd I/O4 BENEFITS High integration I/O2 I/O3 Suitable for high density boards COMPLIES WITH THE FOLLOWING STANDARDS: Max. Test kV current Figure 2: ESD response to IEC61000-4-2 Air 15 - (air discharge 16kV, positive surge) IEC61000-4-2 level 4 Contact 8 30A MIL STD 883C-Method Contact > 4 > 2.67A 3015-7 class3 (Human Body Model) TM: ASD is a trademark of STMicroelectronics. November 2004 REV. 3 1/5ESDA6V1-5SC6 Table 2: Absolute Maximum Ratings (T = 25C) amb Symbol Parameter Value Unit MIL STD 883E - Method 3015-7 25 V ESD discharge IEC61000-4-2 air discharge 20 kV PP IEC61000-4-2 contact discharge 15 P Peak pulse power (8/20s) 100 W PP T Junction temperature 150 C j T Storage temperature range -55 to +150 C stg Maximum lead temperature for soldering during 10 s at 5mm for T 260 C L case T Operating temperature range (note 1) -40 to +125 C op Note 1: The evolution of the operating parameters versus temperature is given by curves and T parameter. Table 3: Electrical Characteristics (T = 25C) amb I Symbol Parameter IF V Stand-off voltage RM V Breakdown voltage BR VBR V Clamping voltage CL VF Vcl VRM I Leakage current RM V IRM I Peak pulse current PP T Voltage temperature coefficient V Forward voltage drop F Slope = 1/Rd C Capacitance IPP R Dynamic resistance d V I I V R TC V I BR R RM RM d F F min. max. max. typ. max. typ. max. Type note 2 note 3 0V bias -4 VV mA A V m pF V mA 10 /C ESDA6V1-5SC6 6.1 7.2 1 1 3 590 6 50 1.25 200 Note 2: Square pulse, I = 15A, t =2.5s. PP p Note 3: V = T* (T -25C) * V (25C). BR amb BR Figure 3: Peak power dissipation versus initial Figure 4: Peak pulse power versus exponential junction temperature pulse duration (T initial = 25 C) j P T initial / P T initial=25C P (W) PP j PP j PP 1.1 1000 1.0 0.9 0.8 0.7 0.6 100 0.5 0.4 0.3 0.2 0.1 t (s) p T initial (C) j 10 0.0 0 25 50 75 100 125 150 175 1 10 100 2/5