X-On Electronics has gained recognition as a prominent supplier of ESDA8P80-1U1M ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ESDA8P80-1U1M ESD Suppressors / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

ESDA8P80-1U1M STMicroelectronics

ESDA8P80-1U1M electronic component of STMicroelectronics
ESDA8P80-1U1M STMicroelectronics
ESDA8P80-1U1M ESD Suppressors / TVS Diodes
ESDA8P80-1U1M  Circuit Protection

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See Product Specifications
Part No. ESDA8P80-1U1M
Manufacturer: STMicroelectronics
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes DFD PROTECTION & FILTER
Datasheet: ESDA8P80-1U1M Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.0929 ea
Line Total: USD 743.2 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 8000
Multiples : 8000
8000 : USD 0.0929
24000 : USD 0.092

0
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 1.3036
10 : USD 0.5832
100 : USD 0.2888
500 : USD 0.2166

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Subcategory
Taric
Vf - Forward Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ESDA8P80-1U1M from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ESDA8P80-1U1M and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESDA8P80-1U1M High power transient voltage suppressor Datasheet - production data Description The ESDA8P80-1U1M is a unidirectional single line TVS diode designed to protect the power line against EOS and ESD transients. 3LQ The device is ideal for applications where high power TVS and board space saving are required. 3LQ Figure 1. Pin configuration SDFNDJH 3LQ 3LQ Features Low clamping voltage Typical peak pulse power: 1100 W (8/20s) Stand-off voltage 6.3 V Unidirectional diode Low leakage current: 0.2 A at 25 C Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Portable multimedia, tablets, mobile phone, smart phone USB V protection BUS Power supply protection Battery protection March 2016 DocID028762 Rev 1 1/10 This is information on a product in full production. www.st.comCharacteristics ESDA8P80-1U1M 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Peak pulse voltage: V IEC 61000-4-2 contact discharge > 30 kV PP IEC 61000-4-2 air discharge > 30 P Peak pulse power (8/20 s) 1100 W PP I Peak pulse current (8/20 s) 80 A PP T Storage temperature range -55 to +150 C stg T Operating junction temperature range -55 to +150 C op Figure 2. Electrical characteristics (definitions) , , ) 9 99 9 ) 999999 &/ %5 50 , 50 , 5 6ORSH 5 G , 33 Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6.9 7.3 V BR R I V = 5.5 V 200 nA RM RM I V = 6.3 V 1A RM RM V I = 60 A 8/20 s 10.8 12 V CL PP V I = 80 A 8/20 s 11.8 13.2 V CL PP R 8/20 s 0.06 d V I = 10 mA 0.75 V F F 2/10 DocID028762 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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