ESDALC5-4BN4 4-line bidirectional Transil, transient voltage surge suppressor for ESD protection Datasheet production data Features 4 bidirectional Transil diodes Breakdown voltage V = 5.5 V min. BR Low leakage current < 60 nA Very small PCB area: 0.8 mm QFN-4L 400 m pitch micro-package Lead-free and RoHS package Complies with the following standards Figure 1. Functional diagram (top view) IEC 61000-4-2 level 4 15 kV (air discharge) 8 kV (contact discharge) I/O4 I/O1 Applications GND Where transient overvoltage protection in ESD sensitive equipment is required, such as: I/O2 I/O3 Mobile phones Portable multimedia devices and accessories Computers, tablets and peripherals Set top boxes Audio equipment Description The ESDALC5-4BN4 is a monolithic array designed to protect up to 4 bidirectional lines against ESD transients. The device is ideal for applications where both reduced printed circuit board space and high ESD protection levels are required. January 2013 Doc ID 023686 Rev 1 1/10 This is information on a product in full production. www.st.com 10Characteristics ESDALC5-4BN4 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Peak pulse voltage, IEC 61000-4-2, level 4: V Contact discharge 30 kV PP Air discharge 30 I Peak pulse current (8/20 s) 4 A pp (1) P GND to I/O 60 W PP Peak pulse power dissipation (8/20 s) T Operating junction temperature range -40 to 125 C j T Storage temperature range -65 + 150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) Symbol Parameter V = Breakdown voltage BR V = Clamping voltage CL I = Leakage current V RM RM V = Stand-off voltage RM I = Peak pulse current PP Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit I = 1 mA, I/O to GND 11 13 R V V BR I = 1 mA, GND to I/O 5.5 8 R I V = 5 V 160 nA RM RM I = 1 A, 8/20 s, I/O to GND 18 pp V V CL I = 1 A, 8/20 s, GND to I/O 14.5 pp C V = 0 V, F = 1 MHz, V = 30 mV 13 15 pF LINE R osc 2/10 Doc ID 023686 Rev 1