ESDALC6V1-1BU2 STMicroelectronics

ESDALC6V1-1BU2 Single-line low capacitance Transil for bidirectional ESD protection Features Breakdown voltage V = 6.1 V min. BR Bidirectional device Multiple ESD strike sustainability Very low diode capacitance: 5 pF typ. at 0 V Low leakage current 0201 SMD package size compatible 2 Ultra small PCB area: 0.18 mm Pin 1 available in different forms RoHS compliant Benefits ST0201 package High ESD protection level High integration Figure 1. Functional diagram (top view) Suitable for high density boards MSL1 Complies with the following standards: IEC 61000-4-2 level 4 15 kV (air discharge) 8 kV (contact discharge) Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Portable multimedia players and accessories Notebooks Description Digital cameras and camcorders The ESDALC6V1-1BU2 is a bidirectional single Communication systems line TVS diode designed to protect data lines or Cellular phone handsets and accessories other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. TM: Transil is a trademark of STMicroelectronics August 2010 Doc ID 15583 Rev 3 1/11 www.st.com 11 Characteristics ESDALC6V1-1BU2 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Peak pulse voltage: V IEC 61000-4-2 contact discharge 8 kV PP EC 61000-4-2 air discharge 15 I Peak pulse current (8/20 s) 1.5 A PP T Storage temperature range - 55 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L T Operating junction temperature range -40 to +125 C op Figure 2. Electrical characteristics (definitions) Symbol Parameter V = Breakdown voltage BR V = Clamping voltage CL I = Leakage current V RM RM V = Stand-off voltage RM I = Forward current F I = Peak pulse current PP I = Breakdown current R V = Forward voltage drop F R = Dynamic impedance d T = Voltage temperature Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6.1 - - V BR R I V = 3 V -- 100 nA RM RM R Square pulse, I = 1 A t = 2.5 s - 2.5 - d PP p -4 T V = T(T - 25 C) x V (25 C) - - 6 10 /C BR amb BR C V = 0 V, F = 1 MHz, V = 30 mV - 5 - pF line R osc osc 2/11 Doc ID 15583 Rev 3