Product Information

ESM6045DV

ESM6045DV electronic component of STMicroelectronics

Datasheet
Darlington Transistors NPN Darl Power Mod
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

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Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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ESM6045DV
STMicroelectronics

1 : USD 78.9136
10 : USD 78.1172
25 : USD 77.3338
100 : USD 76.5373
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

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ESM6045DV
STMicroelectronics

1 : USD 72.0403
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

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ESM6045DV
STMicroelectronics

1 : USD 75.3086
5 : USD 71.5478
10 : USD 70.7994
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

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ESM6045DV
STMicroelectronics

1 : USD 71.6625
10 : USD 66.5496
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

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ESM6045DV
STMicroelectronics

1 : USD 59.4663
5 : USD 58.1288
10 : USD 57.5853
25 : USD 57.5853
100 : USD 57.5853
250 : USD 57.5853
500 : USD 54.8013
N/A

Obsolete
0 - WHS 6

MOQ : 1
Multiples : 1

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ESM6045DV
STMicroelectronics

1 : USD 45.6388
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Maximum DC Collector Current
Mounting Style
Package / Case
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

ESM6045DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL SMPS & UPS DC/DC & DC/AC CONVERTERS ISOTOP WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = -5 V) 600 V CEV BE V Collector-Emitter Voltage (I = 0) 450 V CEO(sus) B V Emitter-Base Voltage (I = 0) 7 V EBO C I Collector Current 84 A C I Collector Peak Current (t = 10 ms) 126 A CM p I Base Current 8 A B I Base Peak Current (t = 10 ms) 16 A BM p o P Total Dissipation at T = 25 C 250 W tot c V Insulation Withstand Voltage (RMS) from All 2500 V isol Four Terminals to Exernal Heatsink o T Storage Temperature -55 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/8 September 2003 ESM6045DV THERMAL DATA o R Thermal Resistance Junction-case (transistor) Max 0.5 C/W thj-case o R Thermal Resistance Junction-case (diode) Max 1.2 C/W thj-case R Thermal Resistance Case-heatsink With Conductive thc-h o Grease Applied Max 0.05 C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER Collector Cut-off VCE = VCEV 1.5 mA o V = V T = 100 C 22 mA Current (R = 5 ) CE CEV j BE I Collector Cut-off V = V 1 mA CEV CE CEV o Current (V = -5) V = V T = 100 C 15 mA BE CE CEV j I Emitter Cut-off Current V = 5 V 1 mA EBO EB (IC = 0) V * Collector-Emitter I = 0.2 A L = 25 mH 450 V CEO(SUS) C Sustaining Voltage V = 450 V clamp (I = 0) B h * DC Current Gain I = 70 A V = 5 V 120 FE C CE V * Collector-Emitter I = 50 A I = 1 A 1.2 V CE(sat) C B o Saturation Voltage I = 50 A I = 1 A T = 100 C 1.6 2 V C B j I = 70 A I = 4 A 1.35 V C B o I = 70 A I = 4 A T = 100 C 1.7 2 V C B j V * Base-Emitter I = 70 A I = 4 A 2.3 V BE(sat) C B o Saturation Voltage IC = 70 A IB = 4 A Tj = 100 C 2.4 3 V diC/dt Rate of Rise of V = 300 V R = 0 t = 3 s 375 450 A/s CC C p o On-state Collector I = 1.5 A T = 100 C B1 j VCE(3 Collector-Emitter V = 300 V R = 6 69 V CC C o s) Dynamic Voltage I = 1.5 A T = 100 C B1 j V (5 Collector-Emitter 3 4.5 V CE V = 300 V R = 6 CC C o s) Dynamic Voltage I = 1.5 A T = 100 C B1 j t Storage Time I = 50 A V = 50 V 3.5 5.5 s s C CC t Fall Time 0.3 0.5 s f V = -5 V R = 0.3 BB BB t Cross-over Time 0.8 1.7 s c Vclamp = 450 V IB1 = 1 A o L = 0.05 mH T = 100 C j V Maximum Collector I = 84 A I = 4 A 450 V CEW CWoff B1 Emitter Voltage V = -5 V V = 50 V BB CC Without Snubber L = 0.03 mH RBB = 0.3 o T = 125 C j o V * Diode Forward Voltage I = 70 A T = 100 C 1.6 1.9 V F F j I Reverse Recovery V = 200 V I = 70 A 38 45 A RM CC F Current di /dt = -375 A/s L < 0.05 H F o T = 100 C j * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % See test circuits in databook introduction To evaluate the conduction losses of the diode use the following equations: 2 VF = 1.5 + 0.0055 IF P = 1.5 IF(AV) + 0.0055 I F(RMS) 2/8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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