FERD30SM100S Field effect rectifier Datasheet - production data Description The FERD30SM100S is based on a proprietary technology that achieves the best in class V /I F R . trade-off for a given silicon surface This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. Table 1. Device summary Symbol Value . 2 % 7 I 30 A F(AV) V 100 V RRM T (max) +175 C j V (typ) 0.39 V F Features ST proprietary process Reduce leakage current Low forward voltage drop High frequency operation ECOPACK 2 compliant component January 2015 DocID027344 Rev 1 1/7 This is information on a product in full production. www.st.comCharacteristics FERD30SM100S 1 Characteristics Table 2. Absolute ratings (limiting values, at 25 C, unless otherwise specified, anode terminals short-circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 60 A F(RMS) I Average forward current, = 0.5 T = 130 C 30 A F(AV) c t = 10 ms p I Surge non repetitive forward current 250 A FSM sinusoidal T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 175 C j dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink. dTj Rth()j a Table 3. Thermal resistance Symbol Parameter Value (max) Unit R Junction to case 1.6 C/W th(j-c) Table 4. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - - 150 A j V = V R RRM (1) Reverse leakage current T = 125 C - 8 16 I R j mA T = 125 C V = 70 V - - 9 j R T = 25 C -- 0.475 j I = 5 A F T = 125 C - 0.39 0.43 j T = 25 C -- 0.585 j (2) V Forward voltage drop I = 10A V F F T = 125 C - 0.50 0.545 j T = 25 C -0.95 j I = 30 A F T = 125 C - 0.64 0.71 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.56 x I + 0.005 I F(AV) F (RMS) 2/7 DocID027344 Rev 1