HDMIULC6-4F3 4-line, ultralarge bandwhith ESD protection Datasheet production data Features 4-line 15 kV ESD protection Ultralow line capacitance: 1.1 pF Ultralarge bandwidth no influence on signal rise and fall times maximized number of signal harmonics Flip Chip (top view) Flow-through layout with type C HDMI 10 bumps connector Low PCB space area: 1.76 mm footprint Figure 1. Pin configuration (bump side) Very low leakage current 70 nA 21 3 0.4 mm pitch Flip-Chip package (wafer level CSP) to minimize parasitic inductances D 1+ D 1+ RoHS compliant OUT IN A GND B Complies with the standards: D 1- D 1- OUT IN C IEC 61000-4-2 Level 4 15 kV (air discharge) 8 kV (contact discharge) D 2+ D 2+ IN OUT D Applications GND E D 2- D 2- OUT IN F Mobile phones HDMI ports at 1.65 Gb/s and up to 3.2 Gb/s USB 2.0 ports up to 480 Mb/s (Hi-Speed) D = connector side OUT Video line protection Description The HDMIULC6-4F3 is a monolithic, application specific discrete device dedicated to ESD protection of the HDMI connection. It also offers the same high level of protection for IEEE 1394a and IEEE 1394b/c, USB 2.0, Ethernet links, and video lines. Its ultrahigh cutoff frequency (7 GHz) secures a TM: IPAD is a trademark of STMicroelectronics. HDMI, the HDMI logo and High-Definition Multimedia Interface high level of signal integrity. The device topology are trademarks or registered trademarks of HDMI provides this integrity without compromising the Licensing LLC. complete protection of ICs against the most stringent ESD strikes. January 2013 Doc ID 15511 Rev 3 1/9 This is information on a product in full production. www.st.com 9Characteristics HDMIULC6-4F3 1 Characteristics Figure 2. Internal circuit schematic (top view) Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD discharge IEC 61000-4-2 V Air discharge 15 kV PP Contact discharge 8 P Peak pulse power dissipation (8/20 s) 35 W PP T Maximum junction temperature 125 C j T Storage temperature range -55 to + 150 C stg Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter Test condition Min. Typ. Max. Unit Breakdown voltage V between VBUS and I = 1 mA 6 V BR R GND I Leakage current V = 3 V 70 nA RM RM Capacitance between V = 0 V, V = 30 mV, (1) line osc C 1.1 1.4 pF I/O-GND I/O and GND F = 1 MHz V = 0 V, V = 30 mV, line osc Capacitance variation (1) C F = 1 MHz between two lines of the 0.06 pF I/O-GND between I/O and GND same lane BW Bandwidth - 3 dB 5.3 GHz 1. C values are given per line and relative to one GND. I/O-GND 2/9 Doc ID 15511 Rev 3