HSP051-4M10 STMicroelectronics

HSP051-4M10 Datasheet 4-line ESD protection for high speed lines Features Flow-through routing to keep signal integrity Ultralarge bandwidth: 10 GHz Ultralow capacitance: 0.2 pF (I/O to I/O) 0.35 pF (I/O to GND) Very Low dynamic resistance: 0.48 100 differential impedance QFN-10L package Low leakage current: 100 nA at 25 C Functional schematic (top view) Extended operating junction temperature range: -40 C to 150 C Thin package: 0.5 mm max. Internal ly 1 10 I/O 1 not connected RoHS compliant I/O 2 2 9 High ESD protection level GND 3 8 GND High integration I/O 3 4 7 Suitable for high density boards Internal ly I/O 4 5 6 Complies with following standards: not connected MIL-STD 883G Method 3015-7 Class 3B: 8 kV IEC 61000-4-2 level 4: 8 kV (contact discharge), 15 kV (air discharge) Applications The HSP051-4M10 is designed to protect against Product status electrostatic discharge on sub micron technology HSP051-4M10 circuits driving: HDMI 2.0 and 1.4 USB 3.1 and USB3.0 Digital Video Interface Display Port Serial ATA Description The HSP051-4M10 is a 4-channel ESD array with a rail to rail architecture designed specifically for the protection of high speed differential lines. The ultralow variation of the capacitance ensures very low influence on signal-skew. The large bandwidth make it compatible with HDMI2.0.4k/2k (=5.94 Gbps) and USB3.1 (= 10 Gbps). The device is packaged in QFN 2.5 mm x 1 mm with a 500 m pitch. DS9805 - Rev 6 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.HSP051-4M10 Characteristics 1 Characteristics Table 1. Absolute maximum ratings T = 25 C amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 8 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 25 T Operating junction temperature range -40 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L Table 2. Electrical characteristics T = 25 C amb Value Symbol Parameter Unit Min. Typ. Max. V I = 1 mA 4.5 5.8 V BR R I V = 3.6 V 10 100 nA RM RM V I = 1 A, 8/20 s 10 V CL PP V IEC 61000-4-2, +8 kV contact (I = 16 A), measured at 30 ns 13 V CL PP I/O to GND 0.48 R Dynamic resistance, pulse duration 100 ns d GND to I/O 0.96 CI/O - I/O VI/O = 0 V, F = 200 MHz to 9 GHz 0.2 0.3 pF F = 200 MHz to 2.5 GHz 0.4 0.55 pF CI/O - GND VI/O = 0 V F = 2.5 GHz to 9 GHz 0.35 0.45 pF f -3dB 10 GHz C Z Time domain reflectometry: t = 200 ps (10 - 90%), Z = 100 85 100 115 diff r 0 DS9805 - Rev 6 page 2/12