NUP4016P5T5G, SZNUP4016P5T5G Ultra-Low Capacitance Diode-TVS Array for High Speed Data Line Protection NUP4016P5T5G, SZNUP4016P5T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 1) 5.0 V RWM Breakdown Voltage V I = 1 mA, (Note 2) 5.5 V BR T Reverse Leakage Current I V = 5 V 1.0 A R RWM Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.5 0.8 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 0.3 0.5 pF J R 1. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC RWM or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T 3. Include SZ-prefix devices where applicable. TYPICAL PERFORMANCE CURVES (T = 25C unless otherwise noted) J Figure 1. ESD Clamping Voltage Screenshot (8 kV Contact per IEC61000042)