ITA10B1 STMicroelectronics

ITA10B1 electronic component of STMicroelectronics
ITA10B1 STMicroelectronics
ITA10B1 ESD Protection Diodes / TVS Diodes
ITA10B1  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ITA10B1 ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ITA10B1 ESD Protection Diodes / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No.ITA10B1
Manufacturer:STMicroelectronics
Category:ESD Protection Diodes / TVS Diodes
Description:ESD Suppressors / TVS Diodes Dataline Protection
Datasheet:ITA10B1 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.3393
10$ 2.7464
25$ 2.4013
100$ 1.8304
250$ 1.5025
500$ 1.428
1000$ 1.3353
2500$ 1.2279
N/A

Obsolete

Availability0
MOQ : 100
Multiples : 100
QtyUnit Price
100$ 1.2664
300$ 1.2664
500$ 1.2664
1000$ 1.2664
2000$ 1.2664
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.005
10$ 2.0482
100$ 1.6401
500$ 1.456
1000$ 1.2866
2500$ 1.2614
5000$ 1.2614
10000$ 1.2138
25000$ 1.1648
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
Tradename
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ITA10B1 from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ITA10B1 and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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ITAxxB1 Bidirectional Transil array for data line protection Features High surge capability Transil array: I = 40 A (8/20 s) PP Peak pulse power: 300 W (8/20 s) Up to 5 bidirectional Transil functions SO-8 Low clamping factor (V / V ) at high current CL BR level Low leakage current Figure 1. Functional diagram ESD protection up to 15 kV Complies with the following standards I/O1 1 8 GND IEC 61000-4-2 level 4 I/O2 2 7 15 kV (air discharge) 3 6 I/O3 8 kV (contact discharge) MIL STD 883G- Method 3015-7: class 3B I/O4 4 5 GND 25 kV (human body model) Applications Differential data transmission line protection, such as: RS-232 RS-423 RS-422 RS-485 Description Transil diode arrays provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS technology and low voltage supplied ICs. The ITA series combines high surge capability against energetic pulses with high voltage performance against ESD. TM: Transil is a trademark of STMicroelectronics November 2007 Rev 2 1/7 www.st.com 7Characteristics ITAxxB1 1 Characteristics Table 1. Absolute ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power (8/20 s) T initial = T 300 W PP j amb (1) I Peak pulse current (8/20 s) T initial = T 40 A PP j amb 2 2 (1) 2 I tWire I t value 0.6 A s T Maximum operating junction temperature 125 C j T Storage temperature range -55 to +150 C stg T Maximum lead temperature for soldering during 10 s at 5 mm for case 260 C L 1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting. Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter I IPP V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL IRM V VRM VCL I Leakage current RM VBR I Peak pulse current PP T Voltage temperature coefficient C Capacitance V I I V V I V I TC BR R RM RM CL PP CL PP min. 8/20 s max. 8/20 s max. max. Order code max. (1) (1) (1) (2) -4 V mA A V VAVA 10 / C pF ITA6V5B1 6.5 1 10 5 10101225 4 750 ITA10B1 10 1 4 8 15 10 19 25 8 570 ITA18B1 18 1 4 15 25102825 9 350 ITA25B1 25 1 4 24 33103825 12 300 1. Betwenn I/O pin and ground. 2. Between two input pins at 0 V Bias, F = 1 MHz. 2/7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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