ITA6V5B3 STMicroelectronics

ITA6V5B3 electronic component of STMicroelectronics
ITA6V5B3 STMicroelectronics
ITA6V5B3 ESD Protection Diodes / TVS Diodes
ITA6V5B3  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ITA6V5B3 ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ITA6V5B3 ESD Protection Diodes / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No.ITA6V5B3
Manufacturer:STMicroelectronics
Category:ESD Protection Diodes / TVS Diodes
Description:TVS Diode Arrays 6.5V 300W Bidirect
Datasheet:ITA6V5B3 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1000: USD 2.7151 ea
Line Total: USD 2715.1 
Availability : 0
  
QtyUnit Price
1000$ 2.7151
  

Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1000
Multiples : 1
QtyUnit Price
1000$ 2.7151


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 11
Multiples : 1
QtyUnit Price
11$ 7.2026
100$ 6.1974
500$ 5.3862

   
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RoHS - XON
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Minimum Operating Temperature
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Operating Voltage
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We are delighted to provide the ITA6V5B3 from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ITA6V5B3 and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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ITAxxB3 Bidirectional Transil, transient voltage surge suppressor (TVS) array for data line protection Datasheet production data Features High surge capability Transil array: I = 40 A (8/20 s) PP Peak pulse power: 300 W (8/20 s) Separated input - output SO-20 Up to 9 bidirectional Transil functions Low clamping factor (V /V ) at high current CL BR Description level Transil diode arrays provide high overvoltage Low leakage current protection by clamping action. Their ESD protection up to 15 kV instantaneous response to transient overvoltages makes them particularly suited to protect voltage Complies with the following standards sensitive devices such as MOS technology and low voltage supplied ICs. IEC 61000-4-2 level 4 15 kV (air discharge) The ITA series combines high surge capability 8 kV (contact discharge) against energetic pulses with high voltage performance against ESD. MIL STD 883G- Method 3015-7: class 3B 25 kV (human body model) The separated input/output configuration of the device ensures improved protection against very fast transient overvoltage like ESD by elimination Applications of the spikes induced by parasitic inductances created by external wiring. Differential data transmission lines protection, such as: Figure 1. Functional diagram RS-232 RS-423 GND GND 1 20 RS-422 2 19 INPUT OUTPUT RS-485 INPUT 3 18 OUTPUT INPUT 4 17 OUTPUT 5 16 INPUT OUTPUT INPUT 6 15 OUTPUT INPUT 14 OUTPUT 7 13 INPUT 8 OUTPUT INPUT 9 12 OUTPUT GND 10 11 GND TM: Transil is a trademark of STMicroelectronics October 2012 Doc ID 11085 Rev 3 1/8 This is information on a product in full production. www.st.com 8Characteristics ITAxxB3 1 Characteristics Table 1. Absolute ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power (8/20 s) T initial = T 300 W PP j amb (1) I Peak pulse current (8/20 s) T initial = T 40 A PP j amb 2 2 (1) 2 I tWire I t value 0.6 A s T Maximum operating junction temperature 125 C j T Storage temperature range -55 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting. Table 2. Electrical characteristics (definitions, T = 25 C) amb Symbol Parameter I IPP V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL IRM V I Leakage current RM VRM VCL VBR I Peak pulse current PP T Voltage temperature coefficient V Forward voltage drop F C Capacitance Table 3. Electrical characteristics (values, T = 25 C) amb (1) (1) (1) (2) V I I V V I V I TC BR R RM RM CL PP CL PP Order code min. max. max. 8/20 s max. 8/20 s max. max. -4 VmA A V V A V A 10 /C pF ITA6V5B3 6.5 1 10 5 9.5 10 12.1 25 4 1100 ITA18B3 18 1 4 15 2110 2625 9 500 ITA25B3 25 1 4 24 3110 3625 12 420 1. Between I/O pin and ground. 2. Between two input pins at 0 V Bias, F = 1 MHz. 2/8 Doc ID 11085 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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