ITA6V1U1 STMicroelectronics

ITA6V1U1 electronic component of STMicroelectronics
ITA6V1U1 STMicroelectronics
ITA6V1U1 ESD Protection Diodes / TVS Diodes
ITA6V1U1  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ITA6V1U1 ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ITA6V1U1 ESD Protection Diodes / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No.ITA6V1U1
Manufacturer:STMicroelectronics
Category:ESD Protection Diodes / TVS Diodes
Description:STMicroelectronics TVS Diode Arrays 6.1V 300W Unidirect
Datasheet:ITA6V1U1 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2799
10$ 1.2799
100$ 1.2799
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.906
10$ 1.8649
50$ 1.7415
250$ 1.4672
500$ 1.3849
1000$ 1.3575
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.2425
10$ 2.2438
25$ 2.1173
100$ 1.8066
500$ 1.4843
1000$ 1.2773
2000$ 1.2657
N/A

Obsolete

Availability0
MOQ : 8
Multiples : 1
QtyUnit Price
8$ 1.1327
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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We are delighted to provide the ITA6V1U1 from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ITA6V1U1 and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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ITAxxU1 Transil array for data line protection Features High surge capability Transil array: I = 40 A (8/20 s) PP Peak pulse power : 300 W (8/20 s) SO-8 Up to 6 bidirectional Transil functions Low clamping factor (V / V ) at high current CL BR level Figure 1. Functional diagram Low leakage current ESD protection up to 15 kV 8 I/O1 1 I/O6 I/O2 2 7 GND Complies with the following standards IEC 61000-4-2 level 4 I/O3 3 6 GND 15 kV (air discharge) I/O4 4 5 I/O5 8 kV (contact discharge) MIL STD 883G- Method 3015-7: class 3B 25 kV (human body model) Applications Data transmission lines protection, such as: Unipolar signal up to 5.5 V Bipolar signal in the 2.5 V range Description Transil diode arrays provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS technology and low voltage supplied ICs. The ITA series allies high surge capability against energetic pulses with high voltage performance against ESD. TM: Transil is a trademark of STMicroelectronics November 2007 Rev 2 1/8 www.st.com 8Characteristics ITAxxU1 1 Characteristics Table 1. Absolute ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power (8/20 s) T initial = T 300 W PP j amb (1) I Peak pulse current (8/20 s) T initial = T 40 A PP j amb 2 2 (1) 2 I tWire I t value 0.6 A s T Maximum operating junction temperature 125 C j T Storage temperature range -55 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting. Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter I I F V Stand-off voltage RM V Breakdown voltage BR V BR V Clamping voltage CL VF V V CL RM I Leakage current V RM I RM I Peak pulse current PP T Voltage temperature coefficient V Forward voltage drop F IPP C Capacitance V I I V V I V I TC V I BR R RM RM CL PP CL PP F F min. max. 8/20 s max. 8/20 s max. max. max. Order code max. (1) (1) (1) (2) -4 V mA A V VA VA 10 / C pF V A ITA6V1U1 6.51 1 10 5 10 10 12 25 4 1500 1.3 1 1. Between I/O pin and ground. 2. Between two input pins at 0 V Bias, F = 1 MHz. 2/8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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SG3
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