Product Information

LET16060C

LET16060C electronic component of STMicroelectronics

Datasheet
Transistors RF MOSFET RF PWR Trans LdMOST N-Ch 60W 13.8dB 1600
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

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Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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LET16060C
STMicroelectronics

1 : USD 92.1205
5 : USD 90.4296
10 : USD 89.3693
25 : USD 89.3693
100 : USD 89.3693
250 : USD 85.056
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Transistor Type
Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

LET16060C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features Excellent thermal stability Common source configuration P ( 28 V)= 60 W with 13.8 dB gain OUT 1600 MHz BeO free package In compliance with the 2002/95/EC European directive M243 epoxy sealed Description The LET16060C is a common source N-channel enhancement-mode lateral field-effect RF power Figure 1. Pin out transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16060C is designed for high gain and broadband performance operating in 1 common source mode at 28 V. It is ideal for INMARSAT satellite communications. 3 2 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET16060C M243 LET16060C April 2014 DocID022249 Rev 3 1/9 This is information on a product in full production. www.st.comMaximum ratings LET16060C 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 12 A D P Power dissipation ( T = 70 C) 100 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.3 C/W th(JC) 2/9 DocID022249 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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