LET9045F STMicroelectronics

LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P ( 28 V) = 45 W with 18.5 dB gain 960 OUT MHz P ( 36V) = 70 W with 18.5 dB gain 960 OUT MHz BeO free package M250 epoxy sealed In compliance with the 2002/95/EC European directive Figure 1. Pin out Description 1 The LET9045F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045F is designed for high gain 3 and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. 2 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET9045F M250 LET9045F April 2011 Doc ID 16592 Rev 3 1/10 www.st.com 10Maximum ratings LET9045F 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 9 A D P Power dissipation ( T = 70 C) 108 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.2 C/W th(JC) 2/10 Doc ID 16592 Rev 3