LET9060F STMicroelectronics

LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P ( 28 V)= 60 W with 18 dB gain 945 OUT MHz P ( 36 V)= 90 W with 18 dB gain 945 OUT MHz BeO free package M250 epoxy sealed In compliance with the 2002/95/EC european directive Figure 1. Pin out Description 1 The LET9060F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060F is designed for high gain 3 and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. 2 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET9060F M250 LET9060F April 2011 Doc ID 16863 Rev 3 1/9 www.st.com 9Maximum ratings LET9060F 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 12 A D P Power dissipation ( T = 70 C) 130 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.0 C/W th(JC) 2/9 Doc ID 16863 Rev 3