Product Information

LET9060F

Name: LET9060F
Brand: STMicroelectronics
SKU: LET9060F_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

LET9060F electronic component of STMicroelectronics

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Datasheet

Transistors RF MOSFET RF Power LdmoST 60W 18 dB 945MHz

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 LET9060F STMicroelectronics	1 : USD 113.3381 10 : USD 107.4883 25 : USD 104.5635	N/A Obsolete

0 - WHS 2 MOQ : 50 Multiples : 50 LET9060F STMicroelectronics	50 : USD 93.9423	N/A Obsolete

0 - WHS 3 MOQ : 50 Multiples : 50 LET9060F STMicroelectronics	50 : USD 86.1942 100 : USD 86.1942 250 : USD 86.1043 500 : USD 83.2162 1000 : USD 80.8899	N/A Obsolete

0 - WHS 4 MOQ : 1 Multiples : 1 LET9060F STMicroelectronics	1 : USD 86.8364	N/A Obsolete

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Additional Infomation About Product

LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P ( 28 V)= 60 W with 18 dB gain 945 OUT MHz P ( 36 V)= 90 W with 18 dB gain 945 OUT MHz BeO free package M250 epoxy sealed In compliance with the 2002/95/EC european directive Figure 1. Pin out Description 1 The LET9060F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060F is designed for high gain 3 and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. 2 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET9060F M250 LET9060F April 2011 Doc ID 16863 Rev 3 1/9 www.st.com 9Maximum ratings LET9060F 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 12 A D P Power dissipation ( T = 70 C) 130 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.0 C/W th(JC) 2/9 Doc ID 16863 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Id - Continuous Drain Current 12 A 12 A
Vds - Drain-Source Breakdown Voltage 80 V 80 V
Operating Frequency 1 GHz 1 GHz
Gain 18 Db At 945 Mhz 18 Db At 945 Mhz
Output Power 90 W 90 W
Configuration Single Single
Pd - Power Dissipation 130 W 130 W
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case M250 M250
Packaging Bulk Bulk
Series Let9060 Let9060
Brand Stmicroelectronics Stmicroelectronics
Gate-Source Breakdown Voltage 15 V 15 V
Factory Pack Quantity : 25 25