LFTVS10-1F3 STMicroelectronics

LFTVS10-1F3 Transil, transient voltage suppressor Features Transient voltage suppressor Electrostatic discharge protection Electrical overstress protection Unidirectional device Flip Chip Low clamping factor V /V CL BR (4 bumps) Fast response time Very thin package: 0.605 mm Figure 1. Pin configuration (bump side) RoHS compliant A B Complies with the following standards: IEC 61000-4-2 level 4 1 15 kV (air discharge) 8 kV (contact discharge) 2 Description The LFTVS10-1F3 is a single line diode designed Figure 2. Device configuration specifically for the protection of integrated circuits A1 and A2 in portable equipment and miniaturized electronic devices subject to ESD and EOS transient overvoltages. B1 and B2 TM: Transil is a trademark of STMicroelectronics November 2008 Rev 1 1/7 www.st.comCharacteristics LFTVS10-1F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Test condition Value Unit Peak pulse power dissipation 44 (10/1000 s pulse) P T initial = T W PP j amb Peak pulse power dissipation 350 (8/20 s pulse) Non repetitive surge peak forward t = 10 ms p I 11 A FSM current T initial = T j amb T Storage temperature range -55 to +150 C stg T Maximum operating junction temperature 125 C j Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter I V Breakdown voltage BR I F I Leakage current V RM RM V Stand-off voltage RM V V Clamping voltage F CL V V V CL BR RM V I RM R Dynamic impedance d I Peak pulse current PP T Voltage temperature coefficient Slope = 1/Rd I PP V Forward voltage drop F Symbol Test conditions Min. Typ. Max. Unit I = 15 mA 10 V V BR R I V = 8 V 0.5 A RM RM (1) V I = 1 A 13 V CL PP (2) V I = 850 mA 1.05 V F F -4 T 810 / C C V = 0 V, V = 30 mV, F = 1 MHz 200 pF line R OSC 1. 8 / 20 s pulse waveform 2. DC current not recommended for more than 5 s. Even if diode failure mode is short circuit the bumps could exceed melting temperature and the component disassembled from the board. 2/7