M74HC541 OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED) HIGH SPEED: t = 9ns (TYP.) at V = 6V PD CC LOW POWER DISSIPATION: I = 4A(MAX.) at T =25C CC A HIGH NOISE IMMUNITY: V = V = 28 % V (MIN.) NIH NIL CC DIP SOP TSSOP SYMMETRICAL OUTPUT IMPEDANCE: I = I = 6mA (MIN) OH OL BALANCED PROPAGATION DELAYS: t t PLH PHL ORDER CODES WIDE OPERATING VOLTAGE RANGE: PACKAGE TUBE T & R V (OPR) = 2V to 6V CC DIP M74HC541B1R PIN AND FUNCTION COMPATIBLE WITH SOP M74HC541M1R M74HC541RM13TR 74 SERIES 541 TSSOP M74HC541TTR DESCRIPTION The 74HC541 is an advanced high-speed CMOS order to enhance PC board layout the M74HC541 OCTAL BUS BUFFER (3-STATE) fabricated with offer a pinout having inputs and outputs on 2 silicon gate C MOS technology. The M74HC541 opposite sides of the package. is a non inverting buffer. All inputs are equipped with protection circuits The 3-STATE control gate operates as a two input against static discharge and transient excess AND such that if either G1 and G2 are high, all voltage. eight output are in the high impedance state. In PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/10M74HC541 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 19 G1, G2 Output Enable Inputs 2, 3, 4, 5, 6, A1 to A8 Data Inputs 7, 8, 9 18, 17, 16, Y1 to Y8 Bus Outputs 15, 14, 13, 12, 11 10 GND Ground (0V) 20 V Positive Supply Voltage CC TRUTH TABLE INPUT OUTPUT G1 G2 An Yn HXXZ XHXZ LLHH LLLL X : Dont Care Z : High Impedance ABSOLUTE MAXIMUM RATINGS Symbol Parameter ValueUnit V Supply Voltage -0.5 to +7 V CC V DC Input Voltage -0.5 to V + 0.5 V I CC V DC Output Voltage -0.5 to V + 0.5 V O CC I DC Input Diode Current 20 mA IK I DC Output Diode Current 20 mA OK I DC Output Current 35 mA O I or I DC V or Ground Current 70 mA CC GND CC P Power Dissipation 500(*) mW D T Storage Temperature -65 to +150 C stg T Lead Temperature (10 sec) 300 C L Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 C derate to 300mW by 10mW/C from 65C to 85C 2/10