BAT43 STMicroelectronics

BAT42 BAT43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. DO-35 These devices have integrated protection against excessive voltage such as electrostatic dis- ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 30 V RRM I Forward Continuous Current T = 25C 200 mA F a I Repetitive Peak Fordware Current t 1s 500 mA FRM p 0.5 I Surge non Repetitive Forward Current* t = 10ms 4 A FSM p P Power Dissipation* T = 65 C 200 mW tot l T Storage and Junction Temperature Range - 65 to +150 C stg T - 65 to +125 C j Maximum Temperature for Soldering during 10s at 4mm from T L 230 C Case THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-ambient* 300 C/W th(j-a) * On infinite heatsink with 4mm lead length October 2001 - Ed: 1C 1/4BAT42 / BAT43 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V BR Tj = 25C I = 100A 30 V R V * I = 200mA F T = 25C F All Types 1 V j I = 10mA T = 25C F BAT 42 0.4 j I = 50mA 0.65 T = 25C F j I = 2mA BAT 43 0.26 0.33 T = 25C F j I = 15mA 0.45 T = 25C F j I * T = 25C V = 25V 0.5 A R j R T = 100C 100 j DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit CT = 25C V = 1V f = 1MHz 7 pF j R Tj = 25CI = 10mA I = 10mA i = 1mA F R rr trr 5ns R = 100 L h T = 25C R = 15K C = 300pF f = 45MHz V = 2V 80 % j L L i * Pulse test: t 300s < 2%. p Fig. 1: Forward current versus forward voltage at Fig. 2: Forward current versus forward voltage different temperatures (typical values). (typical values). 2/4