X-On Electronics has gained recognition as a prominent supplier of M93S66-WMN6P EEPROM across the USA, India, Europe, Australia, and various other global locations. M93S66-WMN6P EEPROM are a product manufactured by STMicroelectronics. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

M93S66-WMN6P STMicroelectronics

M93S66-WMN6P electronic component of STMicroelectronics
M93S66-WMN6P STMicroelectronics
M93S66-WMN6P EEPROM
M93S66-WMN6P  Semiconductors

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Part No. M93S66-WMN6P
Manufacturer: STMicroelectronics
Category: EEPROM
Description: Memory; EEPROM; Microwire; 256x16bit; 2.5÷5.5V; SO8
Datasheet: M93S66-WMN6P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.812 ea
Line Total: USD 0.81 
Availability - 1246
Ship by Thu. 08 May to Mon. 12 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1246
Ship by Thu. 08 May to Mon. 12 May
MOQ : 1
Multiples : 1
1 : USD 0.812
10 : USD 0.8036
27 : USD 0.7112
72 : USD 0.672
1000 : USD 0.6468

   
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We are delighted to provide the M93S66-WMN6P from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the M93S66-WMN6P and other electronic components in the EEPROM category and beyond.

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M93S46-W M93S56-W M93S66-W 4 Kbit, 2 Kbit and 1 Kbit serial MICROWIRE bus EEPROM with write protection Datasheet - production data Features Compatible with MICROWIRE bus serial interface Memory array 1 Kbit, 2 Kbit or 4 Kbit of EEPROM Organized by word (16b) Page = 4 words Write PDIP8 (BN) Byte write within 5 ms Page write within 5 ms Ready/busy signal during programming User defined write protected area High-speed clock: 2 MHz Single supply voltage: 2.5 V to 5.5 V TSSOP8 (DW) Operating temperature range: 169 mil width -40 C up to +85 C. Enhanced ESD protection More than 4 million write cycles More than 200-year data retention Packages SO8 (MN) PDIP8 ECOPACK 1 150 mil width TSSOP8 ECOPACK 2 MSv35377V1 SO8 ECOPACK 2 January 2015 DocID5124 Rev 7 1/32 www.st.com This is information on a product in full production Contents M93S46-W M93S56-W M93S66-W Contents 1 Description ........................................................................................ 5 2 Signal description ............................................................................ 6 2.1 Serial data output (Q) ........................................................................ 6 2.2 Serial data input (D) .......................................................................... 6 2.3 Serial clock (C) .................................................................................. 6 2.4 Chip select (S) ................................................................................... 6 2.5 Protection register (PRE) .................................................................. 6 2.6 Write protect (W) ............................................................................... 6 2.7 V ground ........................................................................................ 6 SS 2.8 Supply voltage (V ) ......................................................................... 6 CC 2.8.1 Operating supply voltage V ............................................................. 6 CC 2.8.2 Device reset ........................................................................................ 7 2.8.3 Power-up conditions ........................................................................... 7 2.8.4 Power-down ........................................................................................ 7 3 Operating features ............................................................................ 8 4 Clock pulse counter ......................................................................... 9 5 Instructions ..................................................................................... 10 5.1 Read ............................................................................................... 12 5.2 Write enable and write disable ........................................................ 12 5.3 Write to memory array (WRITE) ...................................................... 13 5.4 Page write ....................................................................................... 14 5.5 Write all ........................................................................................... 15 5.6 Write protection and protect register ............................................... 16 6 Power-up and delivery states ........................................................ 21 6.1 Power-up state ................................................................................ 21 6.2 Initial delivery state .......................................................................... 21 7 Maximum ratings ............................................................................ 22 8 DC and AC parameters .................................................................. 23 9 Package mechanical data .............................................................. 27 10 Part numbering ............................................................................... 30 11 Revision history .............................................................................. 31 2/32 DocID5124 Rev 7

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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